Sensor element for a metal-insulator-semiconductor camera system (MISCam)

We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.

Coexistence of Universal and Topological Anomalous Hall Effects in Metal CrO2 Thin Films in the Dirty Limit

The scaling exponent of 1.6 between anomalous Hall and longitudinal conductivity, characteristic of the universal Hall mechanism in dirty-metal ferromagnets, emerges from a series of CrO2 films as we systematically increase structural disorder. Magnetic disorder in CrO2 increases with temperature and this drives a separate topological Hall mechanism. We find that these terms are controlled discretely by structural and magnetic defect populations, and their coexistence leads to apparent divergence from exponent 1.6, suggesting that the universal term is more prevalent than previously realized.

The spin polarization of CrO2 revisited

Here, we use Andreev reflection spectroscopy to study the spin polarization of high quality CrO2 films. We study the spin polarization as a function of growth temperature, resulting in grain size and electrical resistivity. In these films low temperature growth appears to be a necessary but not sufficient condition to guarantee the observation of high spin polarization, and this is only observed in conjunction with suppressed superconducting gap values and anomalously low interface properties. We suggest that this combination of observations is a manifestation of the long range spin triplet proximity effect. (C) 2007 American Institute of Physics.

Driving Scheme Using MIS Photosensor for Luminance Control of AMOLED Pixel

This paper presents a new driving scheme utilizing an in-pixel metal-insulator-semiconductor (MIS) photosensor for luminance control of active-matrix organic light-emitting diode (AMOLED) pixel. The proposed 3-TFT circuit is controlled by an external driver performing the signal readout, processing, and programming operations according to a luminance adjusting algorithm. To maintain the fabrication simplicity, the embedded MIS photosensor shares the same layer stack with pixel TFTs. Performance characteristics of the MIS structure with a nc-Si : H/a-Si : H bilayer absorber were measured and analyzed to prove the concept. The observed transient dark current is associated with charge trapping at the insulator-semiconductor interface that can be largely eliminated by adjusting the bias voltage during the refresh cycle. Other factors limiting the dynamic range and external quantum efficiency are also determined and verified using a small-signal model of the device. Experimental results demonstrate the feasibility of the MIS photosensor for the discussed driving scheme.