Aplicação de redes neuronais artificiais à deteção e isolamento de falhas em processos industriais

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica

Layered smart grid architecture approach and field tests by ZigBee technology

This paper presents a layered Smart Grid architecture enhancing security and reliability, having the ability to act in order to maintain and correct infrastructure components without affecting the client service. The architecture presented is based in the core of well design software engineering, standing upon standards developed over the years. The layered Smart Grid offers a base tool to ease new standards and energy policies implementation. The ZigBee technology implementation test methodology for the Smart Grid is presented, and provides field tests using ZigBee technology to control the new Smart Grid architecture approach. (C) 2014 Elsevier Ltd. All rights reserved.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.