A non-pixel image reader for continuous image detection based on tandem heterostructures

An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The device is a two terminal image sensing structure. The charge packets are injected optically into the p-i-n writer and confined at the illuminated regions changing locally the electrical field profile across the p-i-n reader. An optical scanner is used for charge readout. The design allows a continuous readout without the need for pixel-level patterning. The role of light pattern and scanner wavelengths on the readout parameters is analyzed. The optical-to-electrical transfer characteristics show high quantum efficiency, broad spectral response, and reciprocity between light and image signal. A numerical simulation supports the imaging process. A black and white image is acquired with a resolution around 20 mum showing the potentiality of these devices for imaging applications.

Stacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devices

In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity and wavelength) are correlated with the sensor output characteristics (light-to-dark sensivity, spatial resolution, linearity and S/N ratio). The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. Multilayered p-i'-n-p-i-n heterostructures can also be used as wavelength-division multiplexing /demultiplexing devices in the visible range. Here the sensor element faces the modulated light from different input colour channels, each one with a specific wavelength and bit rate. By reading out the photocurrent at appropriated applied bias, the information is multiplexed or demultiplexed and can be transmitted or recovered again. Electrical models are present to support the sensing methodologies.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Incorporation of niobium in SAPO-11 materials: Synthesis and characterization

The present work concerns a new synthesis approach to prepare niobium based SAPO materials with AEL structure and the characterization ofNb species incorporated within the inorganic matrixes. The SAPO-11 materials were synthesized with or without the help of a small amine, methylamine (MA) as co-template, while Nb was added directly during the preparation of the initial gel. Structural, textural and acidic properties of the different supports were evaluated by XRD, TPR, UV-Vis spectroscopy, pyridine adsorption followed by IR spectroscopy and thermal analyses. Pure and well crystalline Nb based SAPO-11 materials were obtained, either with or without MA, using in the initial gel a low Si content of about 0.6. Increasing the Si content of the gel up to 0.9 led to an important decrease of the samples crystallinity. Niobium was found to incorporate the AEL pores support as small Nb2O5 oxide particles and also as extra framework cationic species (Nb5+), compensating the negative charges from the matrix and generating new Lewis acid sites. (C) 2011 Elsevier Inc. All rights reserved.

Optical nonlinearity in Tandem SI-C photodetectors

The behavior of tandem pin heterojunctions based on a-SiC: H alloys is investigated under different optical and electrical bias conditions. The devices are optimized to act as optically selective wavelength filters. Depending on the device configuration (optical gaps, thickness, sequence of cells in the stack structure) and on the applied voltage (positive or negative) and optical bias (wavelength, intensity, frequency) it is possible to combine the wavelength discrimination function with the self amplification of the signal. This wavelength nonlinearity allows the amplification or the rejection of a weak signal-impulse. The device works as an active tunable optical filter for wavelength selection and can be used as an add/drop multiplexer (ADM) which enables data to enter and leave an optical network bit stream without having to demultiplex the stream. Results show that, even under weak transient input signals, the background wavelength controls the output signal. This nonlinearity, due to the transient asymmetrical light penetration of the input channels across the device together with the modification on the electrical field profile due to the optical bias, allows tuning an input channel without demultiplexing the stream. This high optical nonlinearity makes the optimized devices attractive for the amplification of all optical signals. Transfer characteristics effects due to changes in steady state light, control d.c. voltage and applied light pulses are presented. Based on the experimental results and device configuration an optoelectronic model is developed. The transfer characteristics effects due to changes in steady state light, dc control voltage or applied light pulses are simulated and compared with the experimental data. A good agreement was achieved.