Wavelength Selective a-SiC:H p-i-n/p-i-n Heterostructure for Fluorescent Proteins Detection

In this paper we present results on the optimization of multilayered a-SiC:H heterostructures that can be used as optical transducers for fluorescent proteins detection using the Fluorescence Resonance Energy Transfer approach. Double structures composed by pin based aSiC:H cells are analyzed. The color discrimination is achieved by ac photocurrent measurement under different externally applied bias. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. An electrical model, supported by a numerical simulation gives insight into the device operation. Results show that the optimized a-SiC:H heterostructures act as voltage controlled optical filters in the visible spectrum. When the applied voltages are chosen appropriately those optical transducers can detect not only the selective excitation of specimen fluorophores, but also the subsequent weak acceptor fluorescent channel emission.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection

It is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lesion detection performance in an anthropomorphic chest phantom: comparative analysis of low-dose CT data on two hybrid imaging systems

Introduction: multimodality environment; requirement for greater understanding of the imaging technologies used, the limitations of these technologies, and how to best interpret the results; dose optimization; introduction of new techniques; current practice and best practice; incidental findings, in low-dose CT images obtained as part of the hybrid imaging process, are an increasing phenomenon with advancing CT technology; resultant ethical and medico-legal dilemmas; understanding limitations of these procedures important when reporting images and recommending follow-up; free-response observer performance study was used to evaluate lesion detection in low-dose CT images obtained during attenuation correction acquisitions for myocardial perfusion imaging, on two hybrid imaging systems.

Field effect and light-assisted a-Si:H sensors for detection of ions in solution

In this paper we present an amorphous silicon device that can be used in two operation modes to measure the concentration of ions in solution. While crystalline devices present a higher sensitivity, their amorphous counterpart present a much lower fabrication cost, thus enabling the production of cheap disposable sensors for use, for example, in the food industry. The devices were fabricated on glass substrates by the PECVD technique in the top gate configuration, where the metallic gate is replaced by an electrolytic solution with an immersed Ag/AgCl reference electrode. Silicon nitride is used as gate dielectric enhancing the sensitivity and passivation layer used to avoid leakage and electrochemical reactions. In this article we report on the semiconductor unit, showing that the device can be operated in a light-assisted mode, where changes in the pH produce changes on the measured ac photocurrent. In alternative the device can be operated as a conventional ion selective field effect device where changes in the pH induce changes in the transistor's threshold voltage.

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.

Protecção contra descargas atmosféricas: aplicação informática de identificação das vulnerabilidades das edificações e de apoio à concepção da protecção

A concepção de instalações eléctricas deve garantir condições de segurança para as pessoas e equipamentos. Para tal é exigida, quer por força de regulamentação ou de normalização, a instalação de dispositivos que garantam a detecção e a protecção contra os defeitos mais comuns nas instalações eléctricas como, por exemplo, as sobreintensidades e as sobretensões. Susceptíveis de criar sobretensões perigosas nas instalações eléctricas, as descargas atmosféricas podem ainda causar danos estruturais elevados, o que, em algumas actividades económicas, torna fundamental a implementação de medidas de protecção contra este fenómeno natural. A protecção contra descargas atmosféricas directas consiste em identificar as vulnerabilidades das estruturas e, nesses locais, implementar dispositivos de captura, direccionamento e escoamento da descarga atmosférica à terra, em condições de segurança. O presente trabalho, desenvolvido no âmbito da dissertação de Mestrado em Engenharia Electrotécnica, visa desenvolver e implementar uma ferramenta computacional, baseada em programas de desenho assistido por computador (CAD) de utilização corrente na área de projecto de arquitectura e de engenharia, que permita, no âmbito de normas internacionais, a análise e implementação de sistemas de protecção em edifícios contra descargas atmosféricas de uma forma rápida e expedita. Baseado num programa CAD 3D, que permite a modelização tridimensional das estruturas a proteger, a ferramenta desenvolvida tentará identificar as suas vulnerabilidades das estruturas às descargas atmosféricas directas, com o intuito de implementar as medidas de protecção mais adequadas do ponto de vista técnico económico. Prevê-se que a ferramenta resultante deste estudo, o Simulador do Modelo Electrogeométrico (SIMODEL), possibilite aos projectistas e particularmente aos alunos das unidades curriculares na área do projecto de instalações eléctricas da Área Departamental de Engenharia de Sistemas e Potencia e Automação (ADESPA) do ISEL, estudar e implementar sistemas de protecção contra descargas atmosféricas (SPDA) baseados na normalização internacional do CENELEC e da IEC, nomeadamente as normas da série 62305.

Sistema de contagem de tráfego e classificação automática de veículos, em tempo real e sem fios

Esta tese tem por objectivo o desenho e avaliação de um sistema de contagem e classificação de veículos automóveis em tempo-real e sem fios. Pretende, também, ser uma alternativa aos actuais equipamentos, muito intrusivos nas vias rodoviárias. Esta tese inclui um estudo sobre as comunicações sem fios adequadas a uma rede de equipamentos sensores rodoviários, um estudo sobre a utilização do campo magnético como meio físico de detecção e contagem de veículos e um estudo sobre a autonomia energética dos equipamentos inseridos na via, com recurso, entre outros, à energia solar. O projecto realizado no âmbito desta tese incorpora, entre outros, a digitalização em tempo real da assinatura magnética deixada pela passagem de um veículo, no campo magnético da Terra, o respectivo envio para servidor via rádio e WAN, Wide Area Network, e o desenvolvimento de software tendo por base a pilha de protocolos ZigBee. Foram desenvolvidas aplicações para o equipamento sensor, para o coordenador, para o painel de controlo e para a biblioteca de Interface de um futuro servidor aplicacional. O software desenvolvido para o equipamento sensor incorpora ciclos de detecção e digitalização, com pausas de adormecimento de baixo consumo, e a activação das comunicações rádio durante a fase de envio, assegurando assim uma estratégia de poupança energética. Os resultados obtidos confirmam a viabilidade desta tecnologia para a detecção e contagem de veículos, assim como para a captura de assinatura usando magnetoresistências. Permitiram ainda verificar o alcance das comunicações sem fios com equipamento sensor embebido no asfalto e confirmar o modelo de cálculo da superfície do painel solar bem como o modelo de consumo energético do equipamento sensor.

Design of a sea-level tsunami detection network for the Gulf of Cadiz

The devastating impact of the Sumatra tsunami of 26 December 2004, raised the question for scientists of how to forecast a tsunami threat. In 2005, the IOC-UNESCO XXIII assembly decided to implement a global tsunami warning system to cover the regions that were not yet protected, namely the Indian Ocean, the Caribbean and the North East Atlantic, the Mediterranean and connected seas (the NEAM region). Within NEAM, the Gulf of Cadiz is the more sensitive area, with an important record of devastating historical events. The objective of this paper is to present a preliminary design for a reliable tsunami detection network for the Gulf of Cadiz, based on a network of sea-level observatories. The tsunamigenic potential of this region has been revised in order to define the active tectonic structures. Tsunami hydrodynamic modeling and GIS technology have been used to identify the appropriate locations for the minimum number of sea-level stations. Results show that 3 tsunameters are required as the minimum number of stations necessary to assure an acceptable protection to the large coastal population in the Gulf of Cadiz. In addition, 29 tide gauge stations could be necessary to fully assess the effects of a tsunami along the affected coasts of Portugal, Spain and Morocco.

Impact of flavor-changing neutral current top quark interactions on BR(t -> bW)

We study the effect that flavor-changing neutral current interactions of the top quark will have on the branching ratio of charged decays of the top quark. We have performed an integrated analysis using Tevatron and B-factories data and with just the further assumption that the Cabibbo-Kobayashi-Maskawa matrix is unitary, we can obtain very restrictive bounds on the strong and electroweak flavor-changing neutral current branching ratios Br(t -> qX)< 4.0x10(-4), where X is any vector boson and a sum in q=u, c is implied.

A non-pixel image reader for continuous image detection based on tandem heterostructures

An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The device is a two terminal image sensing structure. The charge packets are injected optically into the p-i-n writer and confined at the illuminated regions changing locally the electrical field profile across the p-i-n reader. An optical scanner is used for charge readout. The design allows a continuous readout without the need for pixel-level patterning. The role of light pattern and scanner wavelengths on the readout parameters is analyzed. The optical-to-electrical transfer characteristics show high quantum efficiency, broad spectral response, and reciprocity between light and image signal. A numerical simulation supports the imaging process. A black and white image is acquired with a resolution around 20 mum showing the potentiality of these devices for imaging applications.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.

Power Electronics Didactic Modules for Direct Current Machine Control

Several didactic modules for an electric machinery laboratory are presented. The modules are dedicated for DC machinery control and get their characteristic curves. The didactic modules have a front panel with power and signal connectors and can be configurable for any DC motor type. The three-phase bridge inverter proposed is one of the most popular topologies and is commercially available in power package modules. The control techniques and power drives were designed to satisfy static and dynamic performance of DC machines. Each power section is internally self-protected against misconnections and short-circuits. Isolated output signals of current and voltage measurements are also provided, adding versatility for use either in didactic or research applications. The implementation of such modules allowed experimental confirmation of the expected performance.

Comparing a current-carrying circular wire with polygons of equal perimeter: Magnetic field versus magnetic flux

We compare the magnetic field at the centre and the self-magnetic flux through a current-carrying circular loop, with those obtained for current-carrying polygons with the same perimeter. As the magnetic field diverges at the position of the wires, we compare the self-fluxes utilizing several regularization procedures. The calculation is best performed utilizing the vector potential, thus highlighting its usefulness in practical applications. Our analysis answers some of the intuition challenges students face when they encounter a related simple textbook example. These results can be applied directly to the determination of mutual inductances in a variety of situations.

Probing the scalar-pseudoscalar mixing in the 125 GeV Higgs particle with current data

LHC has found hints for a Higgs particle of 125 GeV. We investigate the possibility that such a particle is a mixture of scalar and pseudoscalar states. For definiteness, we concentrate on a two-Higgs doublet model with explicit CP violation and soft Z(2) violation. Including all Higgs production mechanisms, we determine the current constraints obtained by comparing h -> yy with h -> VV*, and comment on the information which can be gained by measurements of h -> b (b) over bar. We find bounds vertical bar s(2)vertical bar less than or similar to 0.83 at one sigma, where vertical bar s(2)vertical bar = 0 (vertical bar s(2)vertical bar = 1) corresponds to a pure scalar (pure pseudoscalar) state.