Photo-induced instability of nanocrystalline silicon TFTs

We examine the instability behavior of nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) in the presence of electrical and optical stress. The change in threshold voltage and sub-threshold slope is more significant under combined bias-and-light stress when compared to bias stress alone. The threshold voltage shift (Delta V-T) after 6 h of bias stress is about 7 times larger in the case with illumination than in the dark. Under bias stress alone, the primary instability mechanism is charge trapping at the semiconductor/insulator interface. In contrast, under combined bias-and-light stress, the prevailing mechanism appears to be the creation of defect states in the channel, and believed to take place in the amorphous phase, where the increase in the electron density induced by electrical bias enhances the non-radiative recombination of photo-excited electron-hole pairs. The results reported here are consistent with observations of photo-induced efficiency degradation in solar cells.

Pentagonal parch-excited sectorized antenna for localization systems

A pentagonal patch-excited sectorized antenna (SA) suitable for 2.4-2.5 GHz localization systems was studied and developed. The integration of six patch-excited structures converges into a sectorized antenna called Hive5 that provides gain improvement compared to a patch antenna, maximum variation of 3 dB beam width over the radiation pattern and circular polarization (CP). This antenna is presented and analyzed taking into account the tap length and the flare angle. The proposed antenna in combination with a RF-Switch provides a cost effective solution for localization based on Wireless Sensor Networks (WSN) and will be used for implementing angle of arrival (AoA) techniques combined with RF fingerprinting techniques.