Lisboa, cidade cenográfica: memorando do projecto

Lisboa, cidade cenográfica é uma instalação que resulta dum processo de sucessivos registos de momentos, experiências e vivências da cidade de Lisboa, com diferentes narrativas. Através do método de assemblage de elementos retirados à rua e reconstruindo composições de blocos volumétricas que incluem desde imagens gráficas, à presença de fontes de luz e de som, e texturas várias, produzi uma instalação destinada a ser ocupada, como se do próprio processo de deambulação por uma cidade se tratasse – neste caso Lisboa. A instalação final, – Lisboa, cidade cenográfica -, constitui em si uma maqueta, como ponto de partida para um outro processo, quase interminável, que conduzisse a uma outra instalação que nos engolisse e se apoderasse da nossa presença. Manipulando diferentes escalas, composições e morfologias de espaço obter-se-ia uma instalação quase infindável, como a própria cidade. A actual instalação é como a síntese dum Fóssil Urbano. Na observação e captação de imagens da cidade houve a preocupação de efectuar a diferentes horas do dia. Os sons utilizados na instalação, foram gravados nas ruas de Lisboa e incluem desde sinos de igreja, ao chilrear de pássaros, aos aviões que sobrevoam, ao trânsito e respectivas buzinas e sirenes de ambulâncias, entre outros. No âmbito do desenvolvimento do projecto e desta Memória Descritiva, tive a preocupação de pedir a algumas pessoas – Cartas de Lisboa -, testemunhando o modo como habitam ou habitaram a cidade. Nos headphones presentes na instalação, ouve-se o poema Lisbon Revisited (1923), de Álvaro de Campos, completando assim o som ambiente de Lisboa, cidade cenográfica. Aquele poema só audível daquele modo, acaba por se sobrepor assim, dum modo subtil, aos outros sons ambiente (exteriores aos headphones).

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation

Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer.

Structural and Microanalytical Studies of CrO2 Thin Films on c-Sapphire by High Resolution Electron Microscopy Methods

Chromium dioxide (CrO2) has been extensively used in the magnetic recording industry. However, it is its ferromagnetic half-metallic nature that has more recently attracted much attention, primarily for the development of spintronic devices. CrO2 is the only stoichiometric binary oxide theoretically predicted to be fully spin polarized at the Fermi level. It presents a Curie temperature of ∼ 396 K, i.e. well above room temperature, and a magnetic moment of 2 mB per formula unit. However an antiferromagnetic native insulating layer of Cr2O3 is always present on the CrO2 surface which enhances the CrO2 magnetoresistance and might be used as a barrier in magnetic tunnel junctions.

Study of the one dimensional and transient bioheat transfer equation: Multi-layer solution development and applications

: In this work we derive an analytical solution given by Bessel series to the transient and one-dimensional (1D) bioheat transfer equation in a multi-layer region with spatially dependent heat sources. Each region represents an independent biological tissue characterized by temperature-invariant physiological parameters and a linearly temperature dependent metabolic heat generation. Moreover, 1D Cartesian, cylindrical or spherical coordinates are used to define the geometry and temperature boundary conditions of first, second and third kinds are assumed at the inner and outer surfaces. We present two examples of clinical applications for the developed solution. In the first one, we investigate two different heat source terms to simulate the heating in a tumor and its surrounding tissue, induced during a magnetic fluid hyperthermia technique used for cancer treatment. To obtain an accurate analytical solution, we determine the error associated with the truncated Bessel series that defines the transient solution. In the second application, we explore the potential of this model to study the effect of different environmental conditions in a multi-layered human head model (brain, bone and scalp). The convective heat transfer effect of a large blood vessel located inside the brain is also investigated. The results are further compared with a numerical solution obtained by the Finite Element Method and computed with COMSOL Multi-physics v4.1 (c). (c) 2013 Elsevier Ltd. All rights reserved.

Interdiffusion at Sb/Ge interfaces induced in thin multilayer films by nanosecond laser irradiation

Thin films consisting of 3 or 4 Sb and Ge alternating layers are irradiated with single nanosecond laser pulses (12 ns, 193 nm). Real time reflectivity (RTR) measurements are performed during irradiation, and Rutherford backscattering spectrometry (RBS) is used to obtain the concentration depth profiles before and after irradiation. Interdiffusion of the elements takes place at the layer interfaces within the liquid phase. The reflectivity transients allow to determine the laser energy thresholds both to induce and to saturate the process being both thresholds dependent on the multilayer configuration. It is found that the energy threshold to initiate the process is lower when Sb is at the surface while the saturation is reached at lower energy densities in those configurations with thinner layers.