A Design methodology for integrated inductor-based DC-DC converters

A design methodology for monolithic integration of inductor based DC-DC converters is proposed in this paper. A power loss model of the power stage, including the drive circuits, is defined in order to optimize efficiency. Based on this model and taking as reference a 0.35 mu m CMOS process, a buck converter was designed and fabricated. For a given set of operating conditions the defined power loss model allows to optimize the design parameters for the power stage, including the gate-driver tapering factor and the width of the power MOSFETs. Experimental results obtained from a buck converter at 100 MHz switching frequency are presented to validate the proposed methodology.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Hyperspectral unmixing based on mixtures of Dirichlet components

This paper introduces a new unsupervised hyperspectral unmixing method conceived to linear but highly mixed hyperspectral data sets, in which the simplex of minimum volume, usually estimated by the purely geometrically based algorithms, is far way from the true simplex associated with the endmembers. The proposed method, an extension of our previous studies, resorts to the statistical framework. The abundance fraction prior is a mixture of Dirichlet densities, thus automatically enforcing the constraints on the abundance fractions imposed by the acquisition process, namely, nonnegativity and sum-to-one. A cyclic minimization algorithm is developed where the following are observed: 1) The number of Dirichlet modes is inferred based on the minimum description length principle; 2) a generalized expectation maximization algorithm is derived to infer the model parameters; and 3) a sequence of augmented Lagrangian-based optimizations is used to compute the signatures of the endmembers. Experiments on simulated and real data are presented to show the effectiveness of the proposed algorithm in unmixing problems beyond the reach of the geometrically based state-of-the-art competitors.

Linux based mobile: operating systems

Trabalho de Projeto para obtenção do grau de Mestre em Engenharia Informática e de Computadores

Arithmetic-based binary-to-RNS converter modulo {2(n)+/- k} for jn-Bit dynamic range

In this brief, a read-only-memoryless structure for binary-to-residue number system (RNS) conversion modulo {2(n) +/- k} is proposed. This structure is based only on adders and constant multipliers. This brief is motivated by the existing {2(n) +/- k} binary-to-RNS converters, which are particular inefficient for larger values of n. The experimental results obtained for 4n and 8n bits of dynamic range suggest that the proposed conversion structures are able to significantly improve the forward conversion efficiency, with an AT metric improvement above 100%, regarding the related state of the art. Delay improvements of 2.17 times with only 5% area increase can be achieved if a proper selection of the {2(n) +/- k} moduli is performed.

Error control on spectral data of four-wave mixing based on a-SiC technology

In this paper we exploit the nonlinear property of the SiC multilayer devices to design an optical processor for error detection that enables reliable delivery of spectral data of four-wave mixing over unreliable communication channels. The SiC optical processor is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Visible pulsed signals are transmitted together at different bit sequences. The combined optical signal is analyzed. Data show that the background acts as selector that picks one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as EXOR and three bit addition are demonstrated optically, showing that when one or all of the inputs are present, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed using four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all-optical processor for error detection and then provide an experimental demonstration of this idea. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical processor based on a-SiC technology for spectral data error control

The SiC optical processor for error detection and correction is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Data shows that the background act as selector that pick one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as exclusive OR (EXOR) and three bit addition are demonstrated optically with a combination of such switching devices, showing that when one or all of the inputs are present the output will be amplified, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed by use of the four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all optical processor for error detection and correction and then, provide an experimental demonstration of this fault tolerant reversible system, in emerging nanotechnology.

PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.