Photodiode with nanocrystalline Si/amorphous Si absorber bilayer

This letter reports a near-ultraviolet/visible/near-infrared n(+)-n-i-delta(i)-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm(2) at -1V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660725]

Capacitive effects in pinpin photodiodes

The application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. (C) 2013 Elsevier B.V. All rights reserved.

Optical demultiplexer based on an a-SiC:H voltage controlled device

In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a wavelength-division demultiplexer for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field however other applications are foreseen. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Antena multi-banda para comunicações móveis

O desenvolvimento dos sistemas de comunicações móveis tem vindo a ser cada vez maior, fazendo com que os sistemas funcionem em várias bandas de operação. Neste sentido, surge a necessidade de desenvolver antenas que superem aquelas já existentes, ao nível das suas propriedades electromagnéticas, para que os sistemas apresentem uma maior qualidade e possam corresponder às exigências inerentes ao desenvolvimento das sociedades. O objectivo desta dissertação de Mestrado é dimensionar, construir e medir uma antena multi-banda para comunicações móveis, com base em estruturas EBG (Electromagnetic Band-Gap) que melhorem o comportamento electromagnético daquelas já existentes, para a banda de frequências de 2.4 GHz e de 5.2 GHz. Começa-se por fazer-se um estudo acerca do estado da arte de estruturas EBG, muito utilizadas em várias áreas, nomeadamente a área das antenas, área sobre a qual esta dissertação assenta. Posteriormente é feita uma breve introdução às antenas microstrip, particularizando de seguida para antenas PIFA e as suas características. Posteriormente é feito o estudo de uma antena PIFA, com e sem a influência de estruturas EBG, para as bandas de 2.4 GHz e 5.2 GHz. Posteriormente são apresentados e comparados resultados das várias antenas. Da análise desses resultados, verifica-se que é possível obter uma antena de baixo perfil com a utilização de estruturas EBG como plano de massa. Além disso, verifica-se também que é possível diminuir a radiação traseira e aumentar a largura de banda. Finalmente, são apresentadas algumas conclusões e várias propostas de trabalho futuro.

a-SiCH Based Devices as Optical Demultiplexers

In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analysed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field, however other applications are also foreseen.

Avaliação de qualidade de energia de um sistema fotovoltaico numa rede elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Implementação de WDM com 4 canais no espetro do visível

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Vertical CNT-Si Photodiode Array

Agências financiadoras: National Natural Science Foundation of China - 61204077; Shenzhen Science and Technology Innovation Commission - JCYJ20120614150521967

Sistema WDM de 4 canais

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

A CMOS micro power switched-capacitor DC-DC step-up converter for indoor light energy harvesting applications

This paper presents a micro power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT fractional open circuit voltage (V-OC) technique is implemented by an asynchronous state machine (ASM) that creates and dynamically adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge sharing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm(2) in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm(2), is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m(2). After starting-up, the system requires an irradiance of only 0.18 W/m(2) (18 mu W/cm(2)) to remain operating. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mu W. These values are, to the best of the authors' knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3 % for an input power of 48 mu W, which is comparable with reported values from circuits operating at similar power levels.

Modular high-current generator for electromagnetic forming with energy recovery

A 10 kJ electromagnetic forming (EMF) modulator with energy recovery based on two resonant power modules, each containing a 4.5 kV/30-kA silicon controlled rectifier, a 1.11-mF capacitor bank and an energy recovery circuit, working in parallel to allow a maximum actuator discharge current amplitude and rate of 50 kA and 2 kA/mu s was successfully developed and tested. It can be plugged in standard single phase 230 V/16 A mains socket and the circuit is able to recover up to 32% of its initial energy, reducing the charging time of conventional EMF systems by up to 68%.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Laser surfasse patterning using a Michelson interferometer and a femtosecond laser radiation

We report on a simple method to obtain surface gratings using a Michelson interferometer and femtosecond laser radiation. In the optical setup used, two parallel laser beams are generated using a beam splitter and then focused using the same focusing lens. An interference pattern is created in the focal plane of the focusing lens, which can be used to pattern the surface of materials. The main advantage of this method is that the optical paths difference of the interfering beams is independent of the distance between the beams. As a result, the fringes period can be varied without a need for major realignment of the optical system and the time coincidence between the interfering beams can be easily monitored. The potential of the method was demonstrated by patterning surface gratings with different periods on titanium surfaces in air.