18 resultados para intrinsic and extrinsic semiconductors


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Resumo I (Prática Pedagógica)- Este Relatório de Estágio é composto por duas secções. Na primeira descreve-se o estágio realizado pela mestranda, na Classe de Flauta do Professor João Pereira Coutinho (JPC), na Escola de Música do Conservatório Nacional (EMCN), ao longo do ano lectivo de 2012/2013, com a supervisão do Professor Nuno Ivo Cruz. Após uma contextualização da EMCN e dos alunos acompanhados no estágio, descreve-se o desempenho de cada um deles, ao longo do ano lectivo, bem como as práticas educativas desenvolvidas pelo Professor Cooperante, nas aulas assistidas, e as desenvolvidas pela estagiária. Realiza-se uma reflexão sobre as mesmas,apresentando, também, algumas vantagens e desvantagens relativamente ao modelo de Estágio proposto.

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This paper presents solutions for fault detection and diagnosis of two-level, three phase voltage-source inverter (VSI) topologies with IGBT devices. The proposed solutions combine redundant standby VSI structures and contactors (or relays) to improve the fault-tolerant capabilities of power electronics in applications with safety requirements. The suitable combination of these elements gives the inverter the ability to maintain energy processing in the occurrence of several failure modes, including short-circuit in IGBT devices, thus extending its reliability and availability. A survey of previously developed fault-tolerant VSI structures and several aspects of failure modes, detection and isolation mechanisms within VSI is first discussed. Hardware solutions for the protection of power semiconductors with fault detection and diagnosis mechanisms are then proposed to provide conditions to isolate and replace damaged power devices (or branches) in real time. Experimental results from a prototype are included to validate the proposed solutions.

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A swift chemical route to synthesize Co-doped SnO2 nanopowders is described. Pure and highly stable Sn1-xCoxO2-delta (0 <= x <= 0.15) crystalline nanoparticles were synthesized, with mean grain sizes <5 nm and the dopant element homogeneously distributed in the SnO2 matrix. The UV-visible diffuse reflectance spectra of the Sn1-xCoxO2-delta samples reveal red shifts, the optical bandgap energies decreasing with increasing Co concentration. The samples' Urbach energies were calculated and correlated with their bandgap energies. The photocatalytic activity of the Sn1-xCoxO2-delta samples was investigated for the 4-hydroxylbenzoic acid (4-HBA) degradation process. A complete photodegradation of a 10 ppm 4-HBA solution was achieved using 0.02% (w/w) of Sn0.95Co0.05O2-delta nanoparticles in 60 min of irradiation. (C) 2014 Elsevier B.V. All rights reserved.