Enhanced short wavelength response in laser-scanned-photodiode image sensor using an a-SiC : H/a-Si : H tandem structure

We report in this paper the recent advances we obtained in optimizing a color image sensor based on the laser-scanned-photodiode (LSP) technique. A novel device structure based on a a-SiC:H/a-Si:H pin/pin tandem structure has been tested for a proper color separation process that takes advantage on the different filtering properties due to the different light penetration depth at different wavelengths a-SM and a-SiC:H. While the green and the red images give, in comparison with previous tested structures, a weak response, this structure shows a very good recognition of blue color under reverse bias, leaving a good margin for future device optimization in order to achieve a complete and satisfactory RGB image mapping. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications. The physics behind the device functioning is explained by recurring to a numerical simulation of the internal electrical configuration of the device.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a Double Color Laser Scanned Photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the color detection process are analyzed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Sensor element for a metal-insulator-semiconductor camera system (MISCam)

We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.

Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices.

Solid-State Bipolar Marx Generator with Voltage Droop Compensation

This paper addresses the voltage droop compensation associated with long pulses generated by solid-stated based high-voltage Marx topologies. In particular a novel design scheme for voltage droop compensation in solid-state based bipolar Marx generators, using low-cost circuitry design and control, is described. The compensation consists of adding one auxiliary PWM stage to the existing Marx stages, without changing the modularity and topology of the circuit, which controls the output voltage and a LC filter that smoothes the voltage droop in both the positive and negative output pulses. Simulation results are presented for 5 stages Marx circuit using 1 kV per stage, with 1 kHz repetition rate and 10% duty cycle.

A DC-DC Step-Up mu-Power Converter for Energy Harvesting Applications, Using Maximum Power PointTracking, Based on Fractional Open Circuit Voltage

A DC-DC step-up micro power converter for solar energy harvesting applications is presented. The circuit is based on a switched-capacitorvoltage tripler architecture with MOSFET capacitors, which results in an, area approximately eight times smaller than using MiM capacitors for the 0.131mu m CMOS technology. In order to compensate for the loss of efficiency, due to the larger parasitic capacitances, a charge reutilization scheme is employed. The circuit is self-clocked, using a phase controller designed specifically to work with an amorphous silicon solar cell, in order to obtain themaximum available power from the cell. This will be done by tracking its maximum power point (MPPT) using the fractional open circuit voltage method. Electrical simulations of the circuit, together with an equivalent electrical model of an amorphous silicon solar cell, show that the circuit can deliver apower of 1132 mu W to the load, corresponding to a maximum efficiency of 66.81%.

Sensor óptico de glicose baseado em cristais líquidos

A presente dissertação tem como finalidade apresentar uma investigação teórica e experimental sobre um sensor polarimétrico, portátil e de baixo custo, baseado num cristal líquido para a medição da concentração de glicose existente numa amostra. Devido ao crescente número de pessoas que sofrem de Diabetes, existe grande interesse em desenvolver sensores portáteis que permitam medir a concentração de glicose de forma rápida, precisa e indolor. Dos vários métodos não invasivos existentes para a medição de concentração de glicose, o método utilizado tem como base a medição da rotação da polarização da luz. Recentemente os sensores polarimétricos baseados em cristais líquidos, têm adquirido grande ênfase devido às suas características únicas que, em comparação com outros moduladores electroópticos, funcionam com tensões mais baixas, apresentam menor consumo energético e maior ângulo de rotação. No entanto também existem diversas desvantagens, nomeadamente a falta de documentação sobre a realização de testes e resultados obtidos em sensores polarimétricos. Têm como desvantagem adicional o facto do comportamento do polarímetro ser fortemente dependente do tipo de cristal líquido e da tensão a este aplicado. A presente dissertação descreve o desenvolvimento de um sensor polarimétrico que inclui a componente óptica, a componente electrónica de detecção e acondicionamento do sinal, a comunicação sem fios com um PC, e, por fim, a componente de análise e interface com o utilizador. Neste sensor polarimétrico poderão ser efectuadas leituras de temperatura das amostras para efeitos de correcção do cálculo da concentração da glicose. O dispositivo permite ainda a gravação dos dados obtidos e identificação dos mesmos. Os resultados obtidos demonstram que o dispositivo é capaz de medir concentrações com 10mg/ml de glicose, com uma percentagem de erro de 15%, para uma amostra com um percurso óptico de apenas 1 cm.

Fast optimum-predictive control and capacitor voltage balancing strategy for bipolar back-to-back NPC converters in high-voltage direct current transmission systems

Multilevel power converters have been introduced as the solution for high-power high-voltage switching applications where they have well-known advantages. Recently, full back-to-back connected multilevel neutral point diode clamped converters (NPC converter) have been used inhigh-voltage direct current (HVDC) transmission systems. Bipolar-connected back-to-back NPC converters have advantages in long-distance HVDCtransmission systems over the full back-to-back connection, but greater difficulty to balance the dc capacitor voltage divider on both sending and receiving end NPC converters. This study shows that power flow control and dc capacitor voltage balancing are feasible using fast optimum-predictive-based controllers in HVDC systems using bipolar back-to-back-connected five-level NPC multilevel converters. For both converter sides, the control strategytakes in account active and reactive power, which establishes ac grid currents in both ends, and guarantees the balancing of dc bus capacitor voltages inboth NPC converters. Additionally, the semiconductor switching frequency is minimised to reduce switching losses. The performance and robustness of the new fast predictive control strategy, and its capability to solve the DC capacitor voltage balancing problem of bipolar-connected back-to-back NPCconverters are evaluated.

New Technique for Uniform Voltage Sharing in Series Stacked Semiconductors

This paper describes the operation of a solid-state series stacked topology used as a serial and parallel switch in pulsed power applications. The proposed circuit, developed from the Marx generator concept, balances the voltage stress on each series stacked semiconductor, distributing the total voltage evenly. Experimental results from a 10 kV laboratory series stacked switch, using 1200 V semiconductors in a ten stages solid-state series stacked circuit, are reported and discussed, considering resistive, capacitive and inductive type loads for high and low duty factor voltage pulse operation.

Estudo e desenvolvimento de um sensor de chuva piezoelétrico para automóveis

A presença de sistemas eletrónicos nos veículos automóveis tem vindo a aumentar de forma considerável nos últimos 30 anos, tornando possível o aumento dos padrões de eficiência, segurança e conforto dos mesmos. Os sistemas de acionamento automático dos limpa-para-brisas, baseados em sensores de chuva óticos, têm registado um crescimento quase exponencial nos últimos 10 a 15 anos; no ano 2000, apenas 5 % dos veículos novos produzidos na Europa estavam equipados com este sistema, hoje é um equipamento amplamente difundido na oferta automóvel existente. O presente trabalho consistiu no estudo de uma solução para deteção de chuva em veículos automóveis com a aplicação de um sensor piezoelétrico, tendo em vista a obtenção de uma solução mais versátil e aplicável em vários pontos do veículo. As reduzidas dimensões, a elevada sensibilidade do sensor e a facilidade de aplicação nas superfícies de ensaio foram fatores que motivaram a escolha deste tipo de equipamento como elemento sensorial. As hipóteses definidas para o procedimento laboratorial basearam-se nas conclusões obtidas em estudos anteriormente desenvolvidos no campo dos sensores de chuva para automóveis e nas capacidades dos materiais piezoelétricos para medição de pluviosidade. Os sensores foram instalados sob as superfícies do veículo que apresentavam, simultaneamente, uma maior exposição à pluviosidade, quando este está em movimento, e um menor risco de sofrer danos. Os resultados obtidos permitiram concluir que a utilização deste tipo de sensores permite detetar elevados níveis de pluviosidade e em superfícies com considerável capacidade de deformação elástica. A sua implementação futura em veículos automóveis exige mais algum trabalho de melhoria dos processos de fixação dos sensores e do condicionamento de sinal utilizados.

A Voltage Limiter Circuit for Indoor Light Energy Harvesting Applications

A voltage limiter circuit for indoor light energy harvesting applications is presented. This circuit is a part of a bigger system, whose function is to harvest indoor light energy, process it and store it, so that it can be used at a later time. This processing consists on maximum power point tracking (MPPT) and stepping-up, of the voltage from the photovoltaic (PV) harvester cell. The circuit here described, ensures that even under strong illumination, the generated voltage will not exceed the limit allowed by the technology, avoiding the degradation, or destruction, of the integrated die. A prototype of the limiter circuit was designed in a 130 nm CMOS technology. The layout of the circuit has a total area of 23414 mu m(2). Simulation results, using Spectre, are presented.

Optical demultiplexer based on an a-SiC:H voltage controlled device

In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a wavelength-division demultiplexer for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field however other applications are foreseen. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection

It is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.