Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Avaliação de qualidade de energia de um sistema fotovoltaico numa rede elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Implementação de WDM com 4 canais no espetro do visível

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Modelling and aerodynamic simulation of a vehicle and failure analysis of a laminated front fender

Master Thesis in Mechanical Engineering field of Maintenance and Production

Exposição ocupacional a mercúrio: associação com a atividade da paraoxonase humana e vitaminas A e E

Mestrado em Segurança e Higiene no Trabalho

Modernização da linha da Beira Baixa: troço Covilhã - Guarda

Trabalho de Projeto para obtenção do grau de Mestre em Engenharia Civil na Área de Especialização em Vias de Comunicação e Transportes

Sistema WDM de 4 canais

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Equipamentos de congelação industrial de produtos alimentares perecíveis: análise comparada de apoio à decisão

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica

Intermodulation in active reconfigurable antennas

Due to the application of active components into antennas these became a source of distortion on wireless communication systems. In this paper we explore the nonlinear effects occurring in a frequency reconfigurable antenna operating with a PIN Diode. We describe the measurement setup used to check the antenna intermodulation products and the measured compression and third order intermodulation limitations of a frequency reconfigurable antenna, operating at the UMTS and WLAN frequencies.

Multilevel high-voltage pulse generation based on a new modular solid-state switch

This paper describes a modular solid-state switching cell derived from the Marx generator concept to be used in topologies for generating multilevel unipolar and bipolar high-voltage (HV) pulses into resistive loads. The switching modular cell comprises two ON/OFF semiconductors, a diode, and a capacitor. This cell can be stacked, being the capacitors charged in series and their voltages balanced in parallel. To balance each capacitor voltage without needing any parameter measurement, a vector decision diode algorithm is used in each cell to drive the two switches. Simulation and experimental results, for generating multilevel unipolar and bipolar HV pulses into resistive loads are presented.

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Design and construction of tunnels in zones subjected to high convergences

The economic development of a region depends on the speed that people and goods can travel. The reduction of people and goods travel time can be achieved by planning smooth road layouts, which are obtained by crossing natural obstacles such as hills, by tunneling at great depths, and allowing the reduction of the road alignment length. The stress state in rock masses at such depths, either because of the overburden or due to the tectonic conditions of the rock mass induces high convergences of the tunnel walls. These high convergence values are incompatible with the supports structural performance installed in the excavation stabilization. In this article it is intended to evaluate and analyze some of the solutions already implemented in several similar geological and geotechnical situations, in order to establish a methodological principle for the design of the tunnels included in a highway section under construction in the region influenced by the Himalayas, in the state of Himachal Pradesh (India) and referenced by "four laning of Kiratpur to Ner Chowk section".

Geological and geotechnical surveys in tectonically active rock masses

The economic development of a region depends on the speed that people and goods can travel. The reduction of people and goods travel time can be achieved by planning smooth road layouts, which are obtained by crossing natural obstacles such as hills, by tunneling at great depths, and allowing the reduction of the road alignment length. The stress state in rock masses at such depths, either because of the overburden or due to the tectonic conditions of the rock mass induces high convergences of the tunnel walls. These high convergence values are incompatible with the supports structural performance installed in the excavation stabilization. In this article it is intended to evaluate and analyze some of the solutions already implemented in several similar geological and geotechnical situations, in order to establish a methodological principle for the design of the tunnels included in a highway section under construction in the region influenced by the Himalayas, in the state of Himachal Pradesh (India) and referenced by "four laning of Kiratpur to Ner Chowk section".

Naturally occurring radioactive materials: a method for assessing the risk of exposure

Naturally Occurring Radioactive Materials (NORM) are materials that are found naturally in the environment and contain radioactive isotopes that can cause negative effects on the health of workers who manipulate them. Present in underground work like mining and tunnel construction in granite zones, these materials are difficult to identify and characterize without appropriate equipment for risk evaluation. The assessing methods were exemplified with a case study applied to the handling and processing of phosphoric rock where one found significant amounts of radioactive isotopes and consequently elevated radon concentrations in enclosed spaces containing these materials. © 2015 Taylor & Francis Group, London.

Molecular details of INH-C-10 binding to wt KatG and Its S315T mutant

Isoniazid (INH) is still one of the two most effective antitubercular drugs and is included in all recommended multitherapeutic regimens. Because of the increasing resistance of Mycobacterium tuberculosis to INH, mainly associated with mutations in the katG gene, new INH-based compounds have been proposed to circumvent this problem. In this work, we present a detailed comparative study of the molecular determinants of the interactions between wt KatG or its S315T mutant form and either INH or INH-C10, a new acylated INH derivative. MD simulations were used to explore the conformational space of both proteins, and results indicate that the S315T mutation did not have a significant impact on the average size of the access tunnel in the vicinity of these residues. Our simulations also indicate that the steric hindrance role assigned to Asp137 is transient and that electrostatic changes can be important in understanding the enzyme activity data of mutations in KatG. Additionally, molecular docking studies were used to determine the preferred modes of binding of the two substrates. Upon mutation, the apparently less favored docking solution for reaction became the most abundant, suggesting that S315T mutation favors less optimal binding modes. Moreover, the aliphatic tail in INH-C10 seems to bring the hydrazine group closer to the heme, thus favoring the apparent most reactive binding mode, regardless of the enzyme form. The ITC data is in agreement with our interpretation of the C10 alkyl chain role and helped to rationalize the significantly lower experimental MIC value observed for INH-C10. This compound seems to be able to counterbalance most of the conformational restrictions introduced by the mutation, which are thought to be responsible for the decrease in INH activity in the mutated strain. Therefore, INH-C10 appears to be a very promising lead compound for drug development.