Mass-degenerate Higgs bosons at 125 GeV in the two-Higgs-doublet model

The analysis of the Higgs boson data by the ATLAS and CMS Collaborations appears to exhibit an excess of h -> gamma gamma events above the Standard Model (SM) expectations, whereas no significant excess is observed in h -> ZZ* -> four lepton events, albeit with large statistical uncertainty due to the small data sample. These results (assuming they persist with further data) could be explained by a pair of nearly mass-degenerate scalars, one of which is an SM-like Higgs boson and the other is a scalar with suppressed couplings to W+W- and ZZ. In the two-Higgs-doublet model, the observed gamma gamma and ZZ* -> four lepton data can be reproduced by an approximately degenerate CP-even (h) and CP-odd (A) Higgs boson for values of sin (beta - alpha) near unity and 0: 70 less than or similar to tan beta less than or similar to 1. An enhanced gamma gamma signal can also arise in cases where m(h) similar or equal to m(H), m(H) similar or equal to m(A), or m(h) similar or equal to m(H) similar or equal to m(A). Since the ZZ* -> 4 leptons signal derives primarily from an SM-like Higgs boson whereas the gamma gamma signal receives contributions from two (or more) nearly mass-degenerate states, one would expect a slightly different invariant mass peak in the ZZ* -> four lepton and gamma gamma channels. The phenomenological consequences of such models can be tested with additional Higgs data that will be collected at the LHC in the near future. DOI: 10.1103/PhysRevD.87.055009.

Reconfigurable SiC Embedded Photonic Structures with Self Optical Bias Control

Multilayered heterostructures based on embedded a-Si:H and a-SiC:H p-i-n filters are analyzed from differential voltage design perspective using short- and long-pass filters. The transfer functions characteristics are presented. A numerical simulation is presented to explain the filtering properties of the photonic devices. Several monochromatic pulsed lights, separately (input channels) or in a polychromatic mixture (multiplexed signal) at different bit rates, illuminated the device. Steady-state optical bias is superimposed from the front and the back side. Results show that depending on the wavelength of the external background and impinging side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. Particular attention is given to the amplification coefficient weights, which allow to take into account the wavelength background effects when a band or frequency needs to be filtered or the gate switch, in which optical active filter gates are used to select and filter input signals to specific output ports in wavelength division multiplexing (WDM) communication systems. This nonlinearity provides the possibility for selective removal or addition of wavelengths. A truth table of an encoder that performs 8-to-1 MUX function exemplifies the optoelectronic conversion.

SiC Multilayer Structures as Light Controlled Photonic Active Filters

Tunable wavelength division multiplexing converters based on amorphous SiC multilayer photonic active filters are analyzed. The configuration includes two stacked p-i-n structures (p(a-SiC:H)-i'(a-SiC:H)-n(a-SiC:H)-p(a-SiC:H)-i(a-Si:H)-n(a-Si:H)) sandwiched between two transparent contacts. The manipulation of the magnitude is achieved through appropriated front and back backgrounds. Transfer function characteristics are studied both theoretically and experimentally. An algorithm to decode the multiplex signal is established. An optoelectronic model supports the optoelectronic logic architecture. Results show that the light-activated device combines the demultiplexing operation with the simultaneous photodetection and self-amplification of an optical signal. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. Depending on the wavelength of the external background and irradiation side, it acts either as a short- or a long-pass band filter or as a band-stop filter. A two-stage active circuit is presented and gives insight into the physics of the device.