3 resultados para semiconductor III-V material

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (BDPI/USP)


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In this work the interaction of cyclopentene with a set of InP(001) surfaces is investigated by means of the density functional theory. We propose a simple approach for evaluating the surface strain and based on it we have found a linear relation between bond and strain energies and the adsorption energy. Our results also indicate that the higher the bond energy, the more disperse the charge distribution is around the adsorption site associated to the high occupied state, a key feature that characterizes the adsorption process. Different adsorption coverages are used to evaluate the proposed equation. Our results suggest that the proposed approach might be extended to other systems where the interaction of the semiconductor surface and the molecule is restricted to first neighbor sites. (C) 2011 Elsevier B.V. All rights reserved.

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The introduction of high-permittivity gate dielectric materials into complementary metal oxide semiconductor technology has reopened the interest in Ge as a channel material mainly due to its high hole mobility. Since HfO(2) and ZrO(2) are two of the most promising dielectric candidates, it is important to investigate if Hf and Zr may diffuse into the Ge channel. Therefore, using ab initio density functional theory calculations, we have studied substitutional and interstitial Hf and Zr impurities in c-Ge, looking for neutral defects. We find that (i) substitutional Zr and Hf defects are energetically more favorable than interstitial defects; (ii) under oxygen-rich conditions, neither Zr nor Hf migration towards the channel is likely to occur; (iii) either under Hf- or Zr-rich conditions it is very likely, particularly for Zr, that defects will be incorporated in the channel.

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A new electrocatalytic active porphyrin nanocomposite material was obtained by electropolymerization of meso-tetra(4-sulphonatephenyl) porphyrinate manganese(III) complex (MnTPPS) in alkaline solutions containing sub-micromolar concentrations of silver chloride. The modified glassy carbon electrodes efficiently oxidize hydrazine at 10 mV versus Ag/AgCl, dramatically decreasing the overpotential of conventional carbon electrodes. The analytical characteristics of this amperometric sensor coupled with batch injection analysis (BIA) technique were explored. Wide linear dynamic range (2.5 x 10(-7) to 2.5 x 10(-4) mol L-1), good repeatability (R.S.D. = 0.84%, n = 30) and low detection (3.1 x 10(-8) mol L-1) and quantification (1.0 x 10(-7) mol L-1) limits, as well as very fast sampling frequency (60 determinations per hour) were achieved. (c) 2007 Elsevier B.V. All rights reserved.