Relativistic dispersion effects on SS433 jets

We here investigate the dispersion properties of radiation in the SS433 relativistic jets. We assume that the jet is composed of cold electron-proton plasma immersed in a predominantly parallel magnetic field to the jet axis. We find that for the mildly relativistic source SS433 (for which similar or equal to 79 degrees), the bulk velocity is too small (v similar or equal to 0.26c) to produce significant changes in the dispersion properties of the medium. Nonetheless, in the rarefied outer regions of the jets, where radio emission dominates, even a weak magnetic field has some influence on the dispersion properties and there appear two different electromagnetic branches that are slightly sensitive to the bulk relativistic motion. In the inner, X-ray region, the magnetic field is much stronger, but in this region the high electron density preserves the isotropic character of the local plasma and no branch separation occurs. In the region of the jet where the IR and optical emission dominates, the cold plasma may be also considered isotropic, i.e., neither the magnetic field nor the bulk velocity is able to affect the propagation of the radiation. Finally, we find that the Doppler line displacement in SS433 is affected by plasma dispersion only in a narrow frequency range in the far IR. As a consequence, although the shift (z) modulation due to precession of the SS433 jets is well described by previous work, it has to be corrected by plasma dispersion effects in the far-IR range.

Theoretical investigation of Hf and Zr defects in c-Ge

The introduction of high-permittivity gate dielectric materials into complementary metal oxide semiconductor technology has reopened the interest in Ge as a channel material mainly due to its high hole mobility. Since HfO(2) and ZrO(2) are two of the most promising dielectric candidates, it is important to investigate if Hf and Zr may diffuse into the Ge channel. Therefore, using ab initio density functional theory calculations, we have studied substitutional and interstitial Hf and Zr impurities in c-Ge, looking for neutral defects. We find that (i) substitutional Zr and Hf defects are energetically more favorable than interstitial defects; (ii) under oxygen-rich conditions, neither Zr nor Hf migration towards the channel is likely to occur; (iii) either under Hf- or Zr-rich conditions it is very likely, particularly for Zr, that defects will be incorporated in the channel.

Nickel catalysts supported on ZrO2, Y2O3-stabilized ZrO2 and CaO-stabilized ZrO2 for the steam reforming of ethanol: Effect of the support and nickel load

Catalysts with various nickel loads were prepared on supports of ZrO2, ZrO2-Y2O3 and ZrO2-CaO, characterized by XRD and TPR and tested for activity in ethanol steam reforming. XRD of the supports identified the monoclinic crystalline phase in the ZrO2 and cubic phases in the ZrO2-Y2O3 and ZrO2-CaO supports. In the catalysts, the nickel impregnated on the supports was identified as the NiO phase. In the TPR analysis, peaks were observed showing the NiO phase having different interactions with the supports. In the catalytic tests, practically all the catalysts achieved 100% ethanol conversion, H-2 yield was near 70% and the gaseous concentrations of the other co-products varied in accordance with the equilibrium among them, affected principally by the supports. It was observed that when the ZrO2 was modified with Y2O3 and CaO, there were big changes in the CO and CO2 concentrations, which were attributed to the rise in the number of oxygen vacancies, permitting high-oxygen mobility and affecting the gaseous equilibrium. The liquid products analysis showed a low selectivity to liquid co-products during the reforming reactions. (c) 2007 Published by Elsevier B.V.

Integer and fractional microwave induced resistance oscillations in a 2D system with moderate mobility

We report on integer and fractional microwave-induced resistance oscillations in a 2D electron system with high density and moderate mobility, and present results of measurements at high microwave intensity and temperature. Fractional microwave-induced resistance oscillations occur up to fractional denominator 8 and are quenched independently of their fractional order. We discuss our results and compare them with existing theoretical models. (C) 2009 Elsevier B.V. All rights reserved.