Thermoelectric transport properties through a T-shaped single quantum dot

We study the thermopower, thermal conductance, electric conductance and the thermoelectric figure of merit for a gate-defined T-shaped single quantum dot (QD). The QD is solved in the limit of strong Coulombian repulsion U -> infinity, inside the dot, and the quantum wire is modeled on a tight-binding linear chain. We employ the X-boson approach for the Anderson impurity model to describe the localized level within the quantum dot. Our results are in qualitative agreement with recent experimental reports and other theoretical researches for the case of a quantum dot embedded into a conduction channel, employing analogies between the two systems. The results for the thermopower sign as a function of the gate voltage (associated with the quantum dot energy) are in agreement with a recent experimental result obtained for a suspended quantum dot. The thermoelectric figure of merit times temperature results indicates that, at low temperatures and in the crossover between the intermediate valence and Kondo regimes, the system might have practical applicability in the development of thermoelectric devices. (c) 2010 Elsevier B.V. All rights reserved.

Shot Noise in a Spin-Diode Geometry

We apply the master equation technique to calculate shot noise in a system composed of single level quantum dot attached to a normal metal lead and to a ferromagnetic lead (NM-QD-FM). It is known that this system operates as a spin-diode, giving unpolarized currents for forward bias and polarized current for reverse bias. This effect is observed when only one electron can tunnel at a time through the dot, due to the strong intradot Coulomb interaction. We find that the shot noise also presents a signature of this spin-diode effect, with a super-Poissonian shot noise for forward and a sub-Poissonian shot noise for reverse bias voltages. The shot noise thus can provide further experimental evidence of the spin-rectification in the NM-QD-FM geometry.