2 resultados para Polymeric devices
em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (BDPI/USP)
Resumo:
Polymeric electroactive blends formed by electropolymerized aniline inside a non-conductive polyacrylamide porous matrix were already shown as suitable materials for the electrocontrolled release of model compounds like safranin. In this paper the intermolecular interactions between the two components of the blend are put in evidence by Raman spectroscopy measurements. Also, in situ optical microscopy was used to follow changes occurring in the polyaniline/polyacrylamide blend during pyrocathecol violet release tests. These two sets of experiments show the possibility of controlling electrochemically the release of both, safranin (a cation) and pyrocathecol violet (an anion) and allow to infer a release mechanism based on the electromechanical properties of the blends explaining the dependence of the release kinetics on the applied potential. Tetracycline release curves for different potentials and pHs are shown and the obtained profiles are in agreement with those expected for a device acting as an electrochemically driven pump due to the artificial muscle properties of the conducting phase of the blends. (c) 2007 Elsevier B.V. All rights reserved.
Resumo:
In this paper, a detailed study of the capacitance spectra obtained from Au/doped-polyaniline/Al structures in the frequency domain (0.05 Hz-10 MHz), and at different temperatures (150-340 K) is carried out. The capacitance spectra behavior in semiconductors can be appropriately described by using abrupt cut-off models, since they assume that the electronic gap states that can follow the ac modulation have response times varying rapidly with a certain abscissa, which is dependent on both temperature and frequency. Two models based on the abrupt cut-off concept, formerly developed to describe inorganic semiconductor devices, have been used to analyze the capacitance spectra of devices based on doped polyaniline (PANI), which is a well-known polymeric semiconductor with innumerous potential technological applications. The application of these models allowed the determination of significant parameters, such as Debye length (approximate to 20 nm), position of bulk Fermi level (approximate to 320 meV) and associated density of states (approximate to 2x10(18) eV(-1) cm(-3)), width of the space charge region (approximate to 70 nm), built-in potential (approximate to 780 meV), and the gap states` distribution.