Zirconium oxide anodic films: Optical and structural properties

The photoluminescence of anodically prepared ZrO(2) films was investigated. Morphological and microstructural analyses reveal an oxide surface covered by a high distribution of blisters and the major crystallographic structure is the monoclinic phase with small quantities of tetragonal phase. The photoluminescence reveals a broad emission band in the range between 350 and 650 nm. It was proposed that the photoluminescence mechanism is originated from the emission of a recombination center related to defects (oxygen vacancies) formed during Zr anodization. (C) 2008 Elsevier B.V. All rights reserved.

Oxide surface modification: Synthesis and characterization of zirconia-coated alumina

Four aluminas were used as Supports for impregnation with a zirconium oxide with the aim to achieve a coating, without phase separation, between Support and modifier. The Supports were impregnated with different concentrations Of zirconium aqueous resin, obtained through the polymeric precursor method. After impregnation the samples were calcined and then characterized by XRD, which led to identification of crystalline zirconia in different concentrations from each support used. Using a simple geometric model the maximum amount Of Surface modifier Oxide required for the complete coating of a support with a layer of unit cells was estimated. According to this estimate, only the support should be identified below the limit proposed and crystalline zirconium oxide Should be identified above this limit when a complete coating is reached. The results obtained From XRD agree with the estimated values and to confirm the coating, the samples were also characterized by EDS/STEM, HRTEM, XPS, and XAS. The results showed that the zirconium oxide oil the Surface of alumina Support reached the coating in the limit of 15 Zr nm(-2), without the formation of the ZrO(2) phase. (c) 2009 Elsevier Inc. All rights reserved.

X-ray photoelectron spectroscopy analysis of zirconium nitride-like films prepared on Si(100) substrates by ion beam assisted deposition

Thin zirconium nitride films were prepared on Si(l 00) substrates at room temperature by ion beam assisted deposition with a 2 keV nitrogen ion beam. Arrival rate ratios ARR(N/Zr) used were 0.19, 0.39, 0.92, and 1.86. The chemical composition and bonding structure of the films were analyzed with X-ray photoelectron spectroscopy (XPS). Deconvolution results for Zr 3d, Zr 3p(3/2), N 1s, O 1s, and C 1s XPS spectra indicated self-consistently the presence of metal Zr-0, nitride ZrN, oxide ZrO2, oxymnide Zr2N2O, and carbide ZrC phases, and the amounts of these compounds were influenced by ARR(N/Zr). The chemical composition ratio N/Zr in the film increased with increasing ARR(N/Zr) until ARR(N/Zr) reached 0.92, reflecting the high reactivity of nitrogen in the ion beam, and stayed almost constant for ARR(N/Zr) >= 1, the excess nitrogen being rejected from the growing film. A considerable incorporation of contaminant oxygen and carbon into the depositing film was attributed to the getter effect of zirconium. (C) 2007 Elsevier B.V. All rights reserved.