Synthesis of L1(0) Fe-Pd films by electrodeposition and thermal annealing

Fe-Pd alloy films have been prepared by electrochemical deposition from an alkaline electrolyte containing Fe sulfate, Pd chloride and 5-sulfosalicylic acid onto polycrystalline titanium substrates. The as-deposited films were nanocrystalline and magnetically soft (coercivity similar to 25 Oe). L1(0) Fe-Pd films with a (111) preferred orientation were obtained by post-deposition thermal annealing of films with composition about 37 at% Fe in an (Ar + 5% H-2) gas flow at 500 degrees C. Such films exhibit hard magnetic properties, with a coercivity up to 1880 Oe, and a slightly anisotropic magnetic response, with a larger in-plane remanence. Preliminary magnetic investigations support magnetization switching through pinning of domain walls. (c) 2008 Elsevier B.V. All rights reserved.

Electrodeposition and characterization of thin selenium films modified with lead ad-atoms

The deposition and characterization of Se films doped with Pb underpotentially deposited (UPD) ad-atoms was studied in this work. The employed experimental techniques were cyclic voltammetry, chronoamperometry, electrochemical impedance spectroscopy, UV-vis spectroscopy and atomic force microscopy. The initial deposition of Se film by chronoamperometry yielded a thin film composed of approximately 700 layers. The Pb UPD on Se was achieved by chronoamperometry in a potential value previously determined in voltammetric experiments. This deposition yielded a deposition charge of approximately 7.5% of the total one. The film resistance altered from 320 Omega cm(2) for Se to 65 Omega cm(2) for the Se/Pb one. Flat band potential values and number of acceptors and donors were also calculated for both films and the values obtained were + 0.95 and -0.51 V for Se and Se/Pb, respectively. The Se coating presented 1.2 x 10(17) cm(3) acceptors while the Se/Pb one presented 3.2 x 10(17) cm(3) donors. The band gap values for both films were 2.4 eV and 1.9 eV, correspondingly. (C) 2008 Elsevier B.V. All rights reserved.

The processes involved in the Se electrodeposition and dissolution on Au electrode: the H2Se formation

The processes involved in the Se electrodeposition, mainly the one related to the formation of H2Se species on Au electrode in perchloric acid solutions, have been investigated through cyclic voltammetry, electrochemical quartz crystal microbalance (EQCM), rotating ring-disc electrode (RRDE), and atomic force microscopy (AFM) techniques. In the experiments performed with the EQCM, with the potential sweep in the negative direction, the responses for the mass variation were divided in three well-defined potential regions: A (from 1.55 to 0.35 V), B (from 0.35 to -0.37 V), and C (from -0.37 to -0.49 V). It was verified that the following processes can occur, respectively: the species (AuO)(2)H2SeO3 was desorbed during the AuO reduction, the reduction of Se(IV) to Se(0), and the formation of H2Se. When the potential was swept in the positive direction, the responses for the mass variation were divided in four well-defined potential regions: D (from -0.49 to 0.66 V), E (from 0.66 to 0.99 V), F (from 0.99 to 1.26 V), and G (from 1.26 to 1.55 V), and the described processes in these regions were, respectively: the Se deposition and adsorption of water molecules and/or perchlorate ions, the Se dissolution, the Se incorporating mass in the form of HO-Se, and the Au oxidation (all potentials are referred to the Ag/AgCl electrode). Making use of the RRDE, using the collection technique, the formation of H2Se species during the Se electrodeposition was investigated. Therefore, it was confirmed that this species is formed on the disc electrode between -0.3 and -0.55 V vs the Ag/AgCl potential range (collecting the oxidized compound onto the ring electrode). AFM images also indicated that the surface topography of the Se-massive deposit on Au is different from the images registered after the formation of H2Se species, confirming the cathodic stripping of Se.

Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films

Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FM) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L(-1) and a film when it was 0.2 or 0.3 mol L(-1). The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E(ap)) and plotting Mott-Schottky curves (C(-2) vs E(ap)), whose slope sign was used to identify p-type ZnSe. (C) 2009 Elsevier B.V. All rights reserved.