THE CO-INFLUENCE OF THE SEA BREEZE AND THE COASTAL UPWELLING AT CABO FRIO: A NUMERICAL INVESTIGATION USING COUPLED MODELS

A coupled atmospheric-oceanic model was used to investigate whether there is a positive feedback between the coastal upwelling and the sea breeze at Cabo Frio - RJ (Brazil). Two experiments were performed to ascertain the influence of the sea breeze on the coastal upwelling: the first one used the coupled model forced with synoptic NE winds of 8 m s(-1) and the sign of the sea breeze circulation was set by the atmospheric model; the second experiment used only the oceanic model with constant 8 m s(-1) NE winds. Then, to study the influence of the coastal upwelling on the sea breeze, two more experiments were performed: one using a coastal upwelling representative SST initial field and the other one using a constant and homogeneous SST field of 26 degrees C. Finally, two more experiments were conducted to verify the influence of the topography and the spatial distribution of the sea surface temperature on the previous results. The results showed that the sea breeze can intensify the coastal upwelling, but the coastal upwelling does not intensify the sea breeze circulation, suggesting that there is no positive feedback between these two phenomena at Cabo Frio.

Characterization of anodic silicon oxide films grown in room temperature ionic liquids

The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N-n-butyl-N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (< 30 ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5 nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained. (C) 2007 Elsevier Ltd. All rights reserved.