7 resultados para microstrip
em WestminsterResearch - UK
Resumo:
A compact highly linear microstrip dual-mode electronically switchable filter is presented. The key characteristics of the dual-mode switchable filter are investigated and described. A second order filter design procedure is outlined to facilitate the realisation of Butterworth and Chebyshev functions. The proposed filter was built and tested with NXP pin diode model BAP65-03. The measured and simulated results are in good agreement. The measured insertion loss in the ON state was 3.0 dB the isolation in the OFF state was 45 dB at the centre frequency. An evaluation of filter distortion is presented for digitally modulated 16 QAM and QPSK signals.
Resumo:
A novel compact tunable bandstop filter using Defected Microstrip Structure (DMS) is presented in this paper. The structure utilizes a modified T shaped DMS which helps in miniaturization of the filter. To verify the concept, one such filter was simulated, designed, fabricated and tested. Measurements on a fabricated tunable filter confirm the accuracy of the design procedure. The tuning range of 20% is achieved, ranging from 2.26 GHz to 2.747 GHz. Tuning is achieved by using NXP BB179 varactor diode. A nonlinear distortion evaluation in a tunable filter was experimentally verified. Experimental verification shows the filter is highly linear.
Resumo:
This paper presents electromagnetic simulations of dielectric-filled rectangular waveguide bandpass filter structures with microstrip to waveguide transitions as well as a diplexer based on such filters for modern wireless systems. The two bandpass filters have been designed and simulated at centre frequencies of 11.85 and 14.25 GHz, respectively. A significant size reduction is achieved through dielectric filling.
Resumo:
A compact highly linear microstrip dual - mode optically switchable filter and a reconfigurable power amplifier are presented. The key characteristics of the dual - mode switchable filter are investigated and described. A second order filter design procedure is outlined to facilitate the realisation of Butterworth and Chebyshev functions. The proposed filter was built and tested with an optical switch, which comprised of a silicon dice acti vated using near infrared light. The measured and simulated results are in good agreement. The measured insertion loss in the ON state was 3.0 dB the isolation in the OFF state was 45 dB at the centre frequency. An evaluation of filter distortion is presen ted for digitally modulated M - QAM and M - QAM OFDM singals.
Resumo:
A novel, compact and highly selective microstrip bandpass filter with bandwidth reconfigurability for ultra-wideband (UWB) applications is presented. The proposed design uses stepped impedance resonator (SIR) for realization of bandpass filter (BPF) and employs a single varactor diode (BB135-NXP) for the purpose of reconfiguring bandwidth. Additionally, to improve the selectivity between passband edges, a cross-coupling between I/O feed lines is introduced which generated pairs of attenuation poles at each side of the passband. Measurements on a fabricated reconfigurable filter confirm the accuracy of the design procedure. Measured responses show good agreement with simulation. The proposed filter is able to achieve significant size reduction (8.5 mm × 7.1 mm excluding the feeding ports) as compared to the conventional bandpass filters with reconfigurable bandwidth.
Resumo:
This article presents applications of reconfigurable matching networks for RF amplifier design. Two possible solutions are given, one where the switching element is a PIN diode, and the other is based on graphene. Due to the fact that its conductivity depends on applied bias voltage, the graphene-based circuits can be used in microwave circuits as controllable elements. The structure of the proposed switch is very simple and it is particularly convenient for microstrip-based circuits. Because of that, a design of reconfigurable amplifier with the graphene-based switch is presented together with the one which has the PIN diode switch. Both amplifiers have the same specifications, and the one with the PIN diode switch is fabricated. The amplifier utilizing the PIN switch was used as a reference to make a comparison the two types of switches. Results of both amplifiers are very similar which indicates possible future applications of the graphene-based switch.