Magnetically Biased Graphene Based Switches for Microwave Applications

This paper presents a magnetically biased graphene based switch for CPW resonator applications. Graphene patches are set in the gap between signal and ground lines, thus obtaining the whole structures act as switchable elements. Graphene was modeled as a general material with appropriate surface conductivity. The presented CPW resonator structure acts like a switch in ON state even for magnetic bias field of around 0.5 T. The simulated S parameters of the CPW resonator structure with different magnetic field biasing are presented.

Reconfigurable UWB Filtennas with Dual Bandnotch for Unwanted Bands using Graphene based Switches

Presented are the design and results of a reconfigurable UWB filtenna with sharp dual bandnotch at WiMAX 3.5 GHz and WLAN 5.8 GHz bands. The filtenna is formed by placing three loop resonators in an UWB antenna. The resonators are fitted with Graphene based switches which introduce reconfigurability. The filtenna was simulated electromagnetically and with Graphene based switches in switches OFF and switches ON states. Presented results show a passband from 2.81–12.27 GHz in OFF state and ON state results in sharp dual bandnotch within the passband at 3.45 and 5.95 GHz at a return loss of 2–2.5 dB. The gain and efficiency in both states has also been given and is reduced in ON state at the dual bandnotch. The radiation patterns in E- and H-planes are stable.

Reconfigurable Matching Networks for RF Amplifiers

This article presents applications of reconfigurable matching networks for RF amplifier design. Two possible solutions are given, one where the switching element is a PIN diode, and the other is based on graphene. Due to the fact that its conductivity depends on applied bias voltage, the graphene-based circuits can be used in microwave circuits as controllable elements. The structure of the proposed switch is very simple and it is particularly convenient for microstrip-based circuits. Because of that, a design of reconfigurable amplifier with the graphene-based switch is presented together with the one which has the PIN diode switch. Both amplifiers have the same specifications, and the one with the PIN diode switch is fabricated. The amplifier utilizing the PIN switch was used as a reference to make a comparison the two types of switches. Results of both amplifiers are very similar which indicates possible future applications of the graphene-based switch.

Highly linear reconfigurable UWB filters with independently controlled dual bandnotch

This letter proposes a high-linearity reconfigurable lower ultra-wideband (3.1–5.25 GHz) filter with independently controlled dual bandnotch at WiMAX 3.5 GHz band and satellite communication systems 4.2 GHz band. Reconfigurability has been achieved by the implementation of Graphene based switches (simulation only) and PIN diodes (measurements). The simulation and measurement results in OFF state show an entire bandpass response from 3.1 GHz to 5.25 GHz and with a very low insertion loss. In ON state, the results show that sharp rejections at 3.5 GHz and 4.2 GHz are achieved, with a low passband insertion loss. The two bandnotch operate independently of each other; thus allowing to control the behaviour of the required bandnotch. The third order intermodulation products were also measured in OFF and ON states and the linearity results have been presented. The filter is able to achieve a high performance with good linearity and no significant loss.