2 resultados para THIN AL FILMS

em Universidad de Alicante


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The electronic properties of hematite were investigated by means of synchrotron radiation photoemission (SR-PES) and X-ray absorption spectroscopy (XAS). Hematite samples were exposed to trimethyl aluminum (TMA) pulses, a widely used Al-precursor for the atomic layer deposition (ALD) of Al2O3. SR-PES and XAS showed that the electronic properties of hematite were modified by the interaction with TMA. In particular, the hybridization of O 2p states with Fe 3d and Fe 4s4p changed upon TMA pulses due to electron inclusion as polarons. The change of hybridization correlates with an enhancement of the photocurrent density due to water oxidation for the hematite electrodes. Such an enhancement has been associated with an improvement in charge carrier transport. Our findings open new perspectives for the understanding and utilization of electrode modifications by very thin ALD films and show that the interactions between metal precursors and substrates seem to be important factors in defining their electronic and photoelectrocatalytic properties.

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A 3D mesoporous TiO2 material with well-developed mesostructure is prepared in the form of a binder-free thin (100 nm) film and studied as potential candidate for the negative electrode in lithium microbatteries. By appropriate thermal treatments, the selected crystal structure (anatase, rutile, or amorphous), and micro-/mesostructure of the materials was obtained. The effects of voltage window and prelithiation treatment improved first cycle reversibility up to 86% and capacity retention of 90% over 100 cycles. After a prolonged intercalation of lithium ions in ordered mesoporous TiO2 appeared small particles assigned to Li2Ti2O4 with cubic structure as observed from ex-situ TEM micrographs. This study highlights the flexibility of the potential window to which the electrode can operate. Maximum capacity values over 100 cycles of 470 μA h cm−2 μm−1 and 177 μA h cm−2 μm−1 are obtained for voltage ranges of 0.1–2.6 V and 1.0–2.6 V, respectively. The observed values are between 6 and 2 times higher than those obtained for films with 600 nm (80 μA h cm−2 μm−1) and 900 nm (92 μA h cm−2 μm−1) lengths. This indicates that 100 nm thin TiO2 films with high accessibility show finite-length type diffusion which is interesting for this particular application.