Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

A density-functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density-functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar δ-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie temperature by additional confinement of the holes in a δ-doped layer of Mn by a quantum well.

Ferromagnetism mediated by few electrons in a semimagnetic quantum dot

A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single electron is able to induce a collective spontaneous magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions, at a temperature order of 1 K, 2 orders of magnitude above the ordering temperature in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of electrons in the dot.

Coherently photoinduced ferromagnetism in diluted magnetic semiconductors

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation . The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature TC depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.

Efficient intrinsic spin relaxation in graphene due to flexural distortions

We propose an intrinsic spin scattering mechanism in graphene originated by the interplay of atomic spin-orbit interaction and the local curvature induced by flexural distortions of the atomic lattice. Starting from a multiorbital tight-binding Hamiltonian with spin-orbit coupling considered non-perturbatively, we derive an effective Hamiltonian for the spin scattering of the Dirac electrons due to flexural distortions. We compute the spin lifetime due to both flexural phonons and ripples and we find values in the 1-10 ns range at room temperature. The proposed mechanism dominates the spin relaxation in high mobility graphene samples and should also apply to other planar aromatic compounds.

Anisotropic intrinsic spin relaxation in graphene due to flexural distortions

We propose an intrinsic spin scattering mechanism in graphene originated by the interplay of atomic spin-orbit interaction and the local curvature induced by flexural distortions of the atomic lattice. Starting from a multiorbital tight-binding Hamiltonian with spin-orbit coupling considered nonperturbatively, we derive an effective Hamiltonian for the spin scattering of the Dirac electrons due to flexural distortions. We compute the spin lifetime due to both flexural phonons and ripples and we find values in the microsecond range at room temperature. Interestingly, this mechanism is anisotropic on two counts. First, the relaxation rate is different for off-plane and in-plane spin quantization axis. Second, the spin relaxation rate depends on the angle formed by the crystal momentum with the carbon-carbon bond. In addition, the spin lifetime is also valley dependent. The proposed mechanism sets an upper limit for spin lifetimes in graphene and will be relevant when samples of high quality can be fabricated free of extrinsic sources of spin relaxation.

Intrinsic spin noise in MgO magnetic tunnel junctions

We consider two intrinsic sources of noise in ultra-sensitive magnetic field sensors based on MgO magnetic tunnel junctions, coming both from 25 Mg nuclear spins (I = 5/2, 10% natural abundance) and S = 1 Mg-vacancies. While nuclear spins induce noise peaked in the MHz frequency range, the vacancies noise peaks in the GHz range. We find that the nuclear noise in submicron devices has a similar magnitude than the 1/f noise, while the vacancy-induced noise dominates in the GHz range. Interestingly, the noise spectrum under a finite magnetic field gradient may provide spatial information about the spins in the MgO layer.

Understanding the CO Preoxidation and the Intrinsic Catalytic Activity of Step Sites in Stepped Pt Surfaces in Acidic Medium

In order to deepen the knowledge about the origin of the CO preoxidation process and the intrinsic catalytic activity of Pt superficial steps toward CO oxidation, a series of CO stripping experiments were performed on stepped Pt electrodes in acidic medium. For the occurrence of CO preoxidation, it was found that it arises (reproducibly) whenever four interconnected conditions are simultaneously fulfilled: (1) CO adsorption at potentials lower than about 0.2 V; (2) on surfaces saturated with COads; (3) in the presence of traces of CO in solution; (4) in the presence of surface steps. If any of these four conditions is not satisfied, the CO preoxidation pathway does not appear, even though the steps on the electrode surface are completely covered by CO. By controlling the removal of the CO adlayer (voltammetrically), we show that once the CO adlayer has been partially oxidized, the (111) terrace sites of stepped surfaces are released earlier than the (110) step sites. Moreover, if (110) steps are selectively decorated with CO, its oxidation occurs only at potentials ∼150 mV higher than the CO preoxidation peak. Our results systematically demonstrate that step sites are less active to oxidize CO than those ones responsible for the CO preoxidation process. Once the sites responsible for the CO preoxidation are made free, there is no apparent motion of the remaining adsorbed CO layer, suggesting that the activation of the surface controls the whole process, rather than the diffusion of COads toward hypothetically “most active sites”. Voltammetric and chronoamperometric experiments performed on partially covered CO adlayers suggest that adsorbed CO behave as a motionless species during its oxidation, in which the CO adlayer is removed piece by piece. By means of in situ FTIR experiments, the stretching frequency of CO selectively adsorbed on (110) step sites was examined. Band frequency results confirm that those molecules adsorbed on steps are fully coupled with the adsorbed CO on (111) terraces when the surface reaches full coverage.