Electronic structure of gated graphene and graphene ribbons

We study the electronic structure of gated graphene sheets. We consider both infinite graphene and finite width ribbons. The effect of Coulomb interactions between the electrically injected carriers and the coupling to the external gate are computed self-consistently in the Hartree approximation. We compute the average density of extra carriers n2D, the number of occupied subbands, and the density profiles as a function of the gate potential Vg. We discuss quantum corrections to the classical capacitance and we calculate the threshold Vg above which semiconducting armchair ribbons conduct. We find that the ideal conductance of perfectly transmitting wide ribbons is proportional to the square root of the gate voltage.

Investigating the influence of surfactants on the stabilization of aqueous reduced graphene oxide dispersions and the characteristics of their composite films

The stabilization of reduced graphene oxide (RGO) sheets in aqueous dispersion using a wide range of surfactants of anionic, non-ionic and zwitterionic type has been investigated and compared under different conditions of pH, surfactant and RGO concentration, or sheet size. The observed differences in the performance of the surfactants were rationalized on the basis of their chemical structure (e.g., alkylic vs. aromatic hydrophobic tail or sulfonic vs. carboxylic polar head), thus providing a reference framework in the selection of appropriate surfactants for the processing of RGO suspensions towards particular purposes. RGO-surfactant composite paper-like films were also prepared through vacuum filtration of the corresponding mixed dispersions and their main characteristics were investigated. The composite paper-like films were also electrochemically characterized. Those prepared with two specific surfactants exhibited a high capacitance in relation to their surfactant-free counterpart.