Ferromagnetism mediated by few electrons in a semimagnetic quantum dot

A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single electron is able to induce a collective spontaneous magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions, at a temperature order of 1 K, 2 orders of magnitude above the ordering temperature in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of electrons in the dot.

Development of exfoliated layered stannosilicate for hydrogen adsorption

The use of hydrogen as an energy vector leads to the development of materials with high hydrogen adsorption capacity. In this work, a new layered stannosilicate, UZAR-S3, is synthesized and delaminated, producing UZAR-S4. UZAR-S3, with the empirical formula Na4SnSi5O14·3.5H2O and lamellar morphology, is a layered stannosilicate built from SnO6 and SiO4 polyhedra. The delamination process used here comprises three stages: protonation with acetic acid, swelling with nonylamine and the delamination itself with an HCl/H2O/ethanol solution. UZAR-S4 is composed of sheets a few nanometers thick with a high aspect ratio and a surface area of 236 m2/g, twenty times higher than that of UZAR-S3. At −196 °C for UZAR-S4, H2 adsorption reached remarkable values of 3.7 and 4.2 wt% for 10 and 40 bar, respectively, the latter value giving a high volumetric H2 storage capacity of 26.2 g of H2/L.