Analysis of the Kondo effect in ferromagnetic atomic-sized contacts

Atomic contacts made of ferromagnetic metals present zero-bias anomalies in the differential conductance due to the Kondo effect. These systems provide a unique opportunity to perform a statistical analysis of the Kondo parameters in nanostructures since a large number of contacts can be easily fabricated using break-junction techniques. The details of the atomic structure differ from one contact to another so a large number of different configurations can be statistically analyzed. Here we present such a statistical analysis of the Kondo effect in atomic contacts made from the ferromagnetic transition metals Ni, Co, and Fe. Our analysis shows clear differences between materials that can be understood by fundamental theoretical considerations. This combination of experiments and theory allows us to extract information about the origin and nature of the Kondo effect in these systems and to explore the influence of geometry and valence in the Kondo screening of atomic-sized nanostructures.

Ballistic spin-valves with Ni nanocontacts

Poster presented in TNT 2005 "Trends in Nanotechnology", Oviedo, Spain, 29 August-02 September, 2005.

Magnetization reversal of ferromagnetic nanowires studied by magnetic force microscopy

The magnetization reversal of two-dimensional arrays of parallel ferromagnetic Fe nanowires embedded in nanoporous alumina templates has been studied. By combining bulk magnetization measurements (superconducting quantum interference device magnetometry) with field-dependent magnetic force microscopy (MFM), we have been able to decompose the macroscopic hysteresis loop in terms of the irreversible magnetic responses of individual nanowires. The latter are found to behave as monodomain ferromagnetic needles, with hysteresis loops displaced (asymmetric) as a consequence of the strong dipolar interactions between them. The application of field-dependent MFM provides a microscopic method to obtain the hysteresis curve of the array, by simply registering the fraction of up and down magnetized wires as a function of applied field. The observed deviations from the rectangular shape of the macroscopic hysteresis loop of the array can be ascribed to the spatial variation of the dipolar field through the inhomogeneously filled membrane. The system studied proves to be an excellent example of the two-dimensional classical Preisach model, well known from the field of hysteresis modeling and micromagnetism.

Spin separation in digital ferromagnetic heterostructures

In a study of the ferromagnetic phase of a multilayer digital ferromagnetic semiconductor in the mean-field and effective-mass approximations, we find the exchange interaction to have the dominant energy scale of the problem, effectively controlling the spatial distribution of the carrier spins in the digital ferromagnetic heterostructures. In the ferromagnetic phase, the majority-spin and minority-spin carriers tend to be in different regions of the space (spin separation). Hence, the charge distribution of carriers also changes noticeably from the ferromagnetic to the paramagnetic phase. An example of a design to exploit these phenomena is given here.

Influence of a uniform current on collective magnetization dynamics in a ferromagnetic metal

We discuss the influence of a uniform current j⃗ on the magnetization dynamics of a ferromagnetic metal. We find that the magnon energy ε(q⃗) has a current-induced contribution proportional to q⃗⋅J→, where J→ is the spin current, and predict that collective dynamics will be more strongly damped at finite j⃗. We obtain similar results for models with and without local moment participation in the magnetic order. For transition metal ferromagnets, we estimate that the uniform magnetic state will be destabilized for j≳109A cm-2. We discuss the relationship of this effect to the spin-torque effects that alter magnetization dynamics in inhomogeneous magnetic systems.

Optical spin transfer in ferromagnetic semiconductors

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic resonance and optical magnetization reorientation.

Optical spin transfer in ferromagnetic semiconductors [poster]

Poster presented in the International Conference of Magnetism, Rome, July 2003.

Kinetic Analysis and Pollutant Evolution During Thermal Degradation of Printed Circuit Boards Considering the Effect of Metals

Paper submitted to the 7th International Symposium on Feedstock Recycling of Polymeric Materials (7th ISFR 2013), New Delhi, India, 23-26 October 2013.

Effect of Temperature, Atmosphere and Metals on the Thermal Degradation of Printed Circuit Boards

The permanent expansion of the market of electrical and electronic equipment (EEE) and the shorter innovation cycles, lead to a faster replacement of these appliances, making EEE a fast-growing source of waste (WEEE). As stated in Directive 2012/19/EU1 on waste electrical and electronic equipment, the content of hazardous components in EEE is a major concern during the waste management phase, and recycling of WEEE is not currently undertaken to a sufficient extent, resulting in a loss of valuable resources.

Edge states in graphene-like systems

The edges of graphene and graphene like systems can host localized states with evanescent wave function with properties radically different from those of the Dirac electrons in bulk. This happens in a variety of situations, that are reviewed here. First, zigzag edges host a set of localized non-dispersive state at the Dirac energy. At half filling, it is expected that these states are prone to ferromagnetic instability, causing a very interesting type of edge ferromagnetism. Second, graphene under the influence of external perturbations can host a variety of topological insulating phases, including the conventional quantum Hall effect, the quantum anomalous Hall (QAH) and the quantum spin Hall phase, in all of which phases conduction can only take place through topologically protected edge states. Here we provide an unified vision of the properties of all these edge states, examined under the light of the same one orbital tight-binding model. We consider the combined action of interactions, spin–orbit coupling and magnetic field, which produces a wealth of different physical phenomena. We briefly address what has been actually observed experimentally.