Emergence of half-metallicity in suspended NiO chains: Ab initio electronic structure and quantum transport calculations

Contrary to the antiferromagnetic and insulating character of bulk NiO, one-dimensional chains of this material can become half metallic due to the lower coordination of their atoms. Here we present ab initio electronic structure and quantum transport calculations of ideal infinitely long NiO chains and of more realistic short ones suspended between Ni electrodes. While infinite chains are insulating, short suspended chains are half-metallic minority-spin conductors that displays very large magnetoresistance and a spin-valve behavior controlled by a single atom.

Electronic structure and transport properties of atomic NiO spinvalves

Ab initio quantum transport calculations show that short NiO chains suspended in Ni nanocontacts present a very strong spin-polarization of the conductance.The generalized gradient approximation we use here predicts a similar polarization of the conductance as the one previously computed with non-local exchange, confirming the robustness of the result. Their use as nanoscopic spinvalves is proposed.

Pollutant emissions during pyrolysis and combustion of waste printed circuit boards, before and after metal removal

The constant increase in the production of electronic devices implies the need for an appropriate management of a growing number of waste electrical and electronic equipment. Thermal treatments represent an interesting alternative to recycle this kind of waste, but particular attention has to be paid to the potential emissions of toxic by-products. In this study, the emissions from thermal degradation of printed circuit boards (with and without metals) have been studied using a laboratory scale reactor, under oxidizing and inert atmosphere at 600 and 850 °C. Apart from carbon oxides, HBr was the main decomposition product, followed by high amounts of methane, ethylene, propylene, phenol and benzene. The maximum formation of PAHs was found in pyrolysis at 850 °C, naphthalene being the most abundant. High levels of 2-, 4-, 2,4-, 2,6- and 2,4,6-bromophenols were found, especially at 600 °C. Emissions of PCDD/Fs and dioxin-like PCBs were quite low and much lower than that of PBDD/Fs, due to the higher bromine content of the samples. Combustion at 600 °C was the run with the highest PBDD/F formation: the total content of eleven 2,3,7,8-substituted congeners (tetra- through heptaBDD/Fs) was 7240 and 3250 ng WHO2005-TEQ/kg sample, corresponding to the sample with and without metals, respectively.

Bis(arylene-ethynylene)-s-tetrazines: A Promising Family of n-Type Organic Semiconductors?

We theoretically describe in this work the n-type semiconducting behavior of a set of bis(arylene-ethynylene)-s-tetrazines ((ArCC)2Tz), by comparing their electronic properties with those of their parent diaryl-s-tetrazines (Ar2Tz) after the introduction of ethynylene bridges. The significantly reduced internal reorganization energy for electron transfer is ascribed to an extended delocalization of the LUMO for (ArCC)2Tz as opposite to that for Ar2Tz, which was described mostly localized on the s-tetrazine ring. The largest electronic coupling and the corresponding electron transfer rates found for bis(phenyl-ethynylene)-s-tetrazine, as well as for some halogenated derivatives, are comparable to those reported for the best performing n-type organic semiconductor materials such as diimides and perylenes. The theoretical mobilities for the studied compounds turn out to be in the range 0.3–1.3 cm2 V–1 s–1, close to values experimentally determined for common n-type organic semiconductors used in real devices. In addition, ohmic contacts can be expected when these compounds are coupled to metallic cathodes such as Na, Ca, and Sm. For these reasons, the future application of semiconducting bis(phenyl-ethynylene)-s-tetrazine and its fluorinated and brominated derivatives in optoelectronic devices is envisioned.