Probing a single nuclear spin in a silicon single electron transistor

We study single electron transport across a single Bi dopant in a silicon nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100 mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias.

Spin alignment of extra electrons in K-phenanthrene clusters taken from the crystalline tripotassium-intercalated phenanthrene structure

The appearance of ferromagnetic correlations among π electrons of phenanthrene (C14H10) molecules in the herringbone structure is proven for K doped clusters both by ab initio quantum-chemistry calculations and by the direct solution of the many-body Pariser-Parr-Pople Hamiltonian. Magnetic ground states are predicted for one or three additional electrons per phenanthrene molecule. These results are a consequence of the small overlap between the lowest unoccupied molecular orbitals (and lowest unoccupied molecular orbitals + 1) of neutral neighboring phenanthrene molecules, which makes the gain in energy by delocalization similar to the corresponding increase due to the Coulomb interaction.

CO2 adsorption on crystalline graphitic nanostructures

CO2 adsorption has been measured in different types of graphitic nanostructures (MWCNTs, acid treated MWCNTs, graphene nanoribbons and pure graphene) in order to evaluate the effect of the different defective regions/conformations in the adsorption process, i.e., sp3 hybridized carbon, curved regions, edge defects, etc. This analysis has been performed both in pure carbon and nitrogen-doped nanostructures in order to monitor the effect of surface functional groups on surface created after using different treatments (i.e., acid treatment and thermal expansion of the MWCNTs), and study their adsorption properties. Interestingly, the presence of exposed defective regions in the acid treated nanostructures (e.g., uncapped nanotubes) gives rise to an improvement in the amount of CO2 adsorbed; the adsorption process being completely reversible. For N-doped nanostructures, the adsorption capacity is further enhanced when compared to the pure carbon nanotubes after the tubes were unzipped. The larger proportion of defect sites and curved regions together with the presence of stronger adsorbent–adsorbate interactions, through the nitrogen surface groups, explains their larger adsorption capacity.

Surface growth for molten silicon infiltration into carbon millimeter-sized channels: Lattice–Boltzmann simulations, experiments and models

The process of liquid silicon infiltration is investigated for channels with radii from 0.25 to 0.75 [mm] drilled in compact carbon preforms. The advantage of this setup is that the study of the phenomenon results to be simplified. For comparison purposes, attempts are made in order to work out a framework for evaluating the accuracy of simulations. The approach relies on dimensionless numbers involving the properties of the surface reaction. It turns out that complex hydrodynamic behavior derived from second Newton law can be made consistent with Lattice-Boltzmann simulations. The experiments give clear evidence that the growth of silicon carbide proceeds in two different stages and basic mechanisms are highlighted. Lattice-Boltzmann simulations prove to be an effective tool for the description of the growing phase. Namely, essential experimental constraints can be implemented. As a result, the existing models are useful to gain more insight on the process of reactive infiltration into porous media in the first stage of penetration, i.e. up to pore closure because of surface growth. A way allowing to implement the resistance from chemical reaction in Darcy law is also proposed.