Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

Rashba spin precession in a magnetic field

Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for the spin field effect transistor, in which the overall perfect spin-polarized current modulation could be acquired. There is a prerequisite, however, that a strong transverse confinement potential should be imposed on the electron gas or the width of the confined quantum well must be narrow. We propose relieving this rather strict limitation by applying an external magnetic field perpendicular to the plane of the electron gas because the effect of the magnetic field on the conductance of the system is equivalent to the enhancement of the lateral confining potential. Our results show that the applied magnetic field has little effect on the spin precession length or period although in this case Rashba spin-orbit coupling could lead to a Zeeman-type spin splitting of the energy band.

Scaling of decoherence effects in quantum computers

The scaling of decoherence rates with qubit number N is studied for a simple model of a quantum computer in the situation where N is large. The two state qubits are localized around well-separated positions via trapping potentials and vibrational centre of mass motion of the qubits occurs. Coherent one and two qubit gating processes are controlled by external classical fields and facilitated by a cavity mode ancilla. Decoherence due to qubit coupling to a bath of spontaneous modes, cavity decay modes and to the vibrational modes is treated. A non-Markovian treatment of the short time behaviour of the fidelity is presented, and expressions for the characteristic decoherence time scales obtained for the case where the qubit/cavity mode ancilla is in a pure state and the baths are in thermal states. Specific results are given for the case where the cavity mode is in the vacuum state and gating processes are absent and the qubits are in (a) the Hadamard state (b) the GHZ state.