Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

Forces from highly focused laser beams: Modeling, measurement and application to refractive index measurements

The optical forces in optical tweezers can be robustly modeled over a broad range of parameters using generalsed Lorenz–Mie theory. We describe the procedure, and show how the combination of experimental measurement of properties of the trap coupled with computational modeling, can allow unknown parameters of the particle—in this case, the refractive index—to be determined.