The electric field effect on spin injection in tunneling regime

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.

Analysis of dynamical tunneling experiments with a Bose-Einstein condensate

Dynamical tunneling is a quantum phenomenon where a classically forbidden process occurs that is prohibited not by energy but by another constant of motion. The phenomenon of dynamical tunneling has been recently observed in a sodium Bose-Einstein condensate. We present a detailed analysis of these experiments using numerical solutions of the three-dimensional Gross-Pitaevskii equation and the corresponding Floquet theory. We explore the parameter dependency of the tunneling oscillations and we move the quantum system towards the classical limit in the experimentally accessible regime.