4 resultados para Static voltage stability margin

em University of Queensland eSpace - Australia


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Deregulations and market practices in power industry have brought great challenges to the system planning area. In particular, they introduce a variety of uncertainties to system planning. New techniques are required to cope with such uncertainties. As a promising approach, probabilistic methods are attracting more and more attentions by system planners. In small signal stability analysis, generation control parameters play an important role in determining the stability margin. The objective of this paper is to investigate power system state matrix sensitivity characteristics with respect to system parameter uncertainties with analytical and numerical approaches and to identify those parameters have great impact on system eigenvalues, therefore, the system stability properties. Those identified parameter variations need to be investigated with priority. The results can be used to help Regional Transmission Organizations (RTOs) and Independent System Operators (ISOs) perform planning studies under the open access environment.

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Bifurcation analysis is a very useful tool for power system stability assessment. In this paper, detailed investigation of power system bifurcation behaviour is presented. One and two parameter bifurcation analysis are conducted on a 3-bus power system. We also examined the impact of FACTS devices on power system stability through Hopf bifurcation analysis by taking static Var compensator (SVC) as an example. A simplified first-order model of the SVC device is included in the 3-bus sample system. Real and reactive powers are used as bifurcation parameter in the analysis to compare the system oscillatory properties with and without SVC. The simulation results indicate that the linearized system model with SVC enlarge the voltage stability boundary by moving Hopf bifurcation point to higher level of loading conditions. The installation of SVC increases the dynamic stability range of the system, however complicates the Hopf bifurcation behavior of the system

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Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

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In this paper, a new control design method is proposed for stable processes which can be described using Hammerstein-Wiener models. The internal model control (IMC) framework is extended to accommodate multiple IMC controllers, one for each subsystem. The concept of passive systems is used to construct the IMC controllers which approximate the inverses of the subsystems to achieve dynamic control performance. The Passivity Theorem is used to ensure the closed-loop stability. (c) 2005 Elsevier Ltd. All rights reserved.