Experiments with Bose-Einstein condensates on an atom chip

We describe the production of BECs on a new type of atom chip based on silver foil. Our atom chip is fabricated with thick wires capable of carrying currents of several amperes without overheating. The silver surface is highly reflective to light resonant with optical transitions used for Rb. The pattern on the chip consists of two parallel Z-trap wires, capable of producing two-wire guide, and two additional endcap wires for varying the axial confinement. Condensates are produced in magnetic microtraps formed within 1 mm of surface of the chip. We have observed the fragmentation of cold atom clouds when brought close to the chip surface. This results from a perturbed trapping potential caused by nanometer deviations of the current path through the wires on the chip. We present results of fragmentation of cold clouds at distances below 100 µm from the wires and investigate the origin of the deviating current. The fragmentation has different characteristics to those seen with copper conductors. The dynamics of atoms in these microtraps is also investigated. ©2005 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

Universality of quantum critical dynamics in a planar optical parametric oscillator

We analyze the critical quantum fluctuations in a coherently driven planar optical parametric oscillator. We show that the presence of transverse modes combined with quantum fluctuations changes the behavior of the quantum image critical point. This zero-temperature nonequilibrium quantum system has the same universality class as a finite-temperature magnetic Lifshitz transition.