[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700degreesC were investigated using transmission electron microscopy working at 300 kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands. (C) 2003 Elsevier B.V. All rights reserved.

Application of edge-to-edge matching model to understand the in-plane texture of TiSi2 (C49) thin films on (001)(Si) surface

The edge-to-edge matching model, which was originally developed for predicting crystallographic features in diffusional phase transformations in solids, has been used to understand the formation of in-plane textures in TiSi2 (C49) thin films on Si single crystal (001)si surface. The model predicts all the four previously reported orientation relationships between C49 and Si substrate based on the actual atom matching across the interface and the basic crystallographic data only. The model has strong potential to be used to develop new thin film materials. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Effects of boron-strontium interactions on eutectic modification in Al-10 mass%Si alloys

The effects of boron and strontium interactions on the eutectic silicon in hypoeutectic Al-Si alloys have been studied. Samples were prepared from an AI-I 0 mass%Si base alloy with different Al-B additions, alone and in combination with strontium. In alloys containing no strontium, boron additions do not cause modification of the eutectic silicon, while in strontium containing alloys, boron additions reduce the level of modification of the eutectic silicon. Thermal analysis parameters and eutectic silicon microstructures were investigated with respect to the Sr to B ratio. In order to modify the eutectic silicon, a Sr/B ratio exceeding 0.4 is required.

Effects of boron on eutectic modification of hypoeutectic Al-Si alloys

The effects of boron on the eutectic modification and solidification mode of hypoeutectic Al-Si alloys have been studied adding different boride phases. The results show that boron does not cause modification of the eutectic silicon. Boron-containing samples display eutectic nucleation and growth characteristics similar to that of unmodified alloys. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Effect of Si additions and heat treatment on the mechanical behaviour of an Al-5Mg casting alloy

Adding 1%Si to binary Al-5Mg alloy slightly increases the yield stress in comparison with the Si free alloy but dramatically reduces the ductility and tensile strength due to the formation of brittle eutectic Mg2Si and pi-Al8FeMg3Si6 particles. Adding 3%Si slightly reduces the yield stress, presumably due to some of the Mg being tied up in the Mg2Si, and further reduces the ductility due to the increased volume fraction of intermetallics. Solution heat treatment at 436degreesC decreases the yield stress of both Si containing alloys, and slightly increases the ductility in the alloy with 3%Si. Subsequent ageing at 180degreesC has no further effects on the strength or ductility. The loss in strength of the heat treated alloys seems to be due to overageing Of Mg2Si precipitates dispersed in the bulk of the alloy. (C) 2004 W. S. Maney Son Ltd.

The influence of strontium on porosity formation in Al-Si alloys

Strontium modification is known to alter the amount, characteristics, and distribution of porosity in Al-Si castings. Although many theories have been proposed to account for these effects, most can be considered inadequate because of their failure to resolve contradictions and discrepancies in the literature. In an attempt to critically appraise some of these theories, the amount, distribution, and morphology of porosity were examined in sand-cast plates of Sr-free and Sr-containing pure Al, Al-l wt pet Si, and Al-9 wt pet Si alloys. Statistical significance testing was used to verify apparent trends in the porosity data. No apparent differences in the amount, distribution, and morphology of porosity were observed between Sr-free and Sr-containing alloys with no or very small eutectic volume fractions. However, Sr modification significantly changed the amount, distribution, and morphology of porosity in alloys with a significant volume fraction of eutectic. ne addition of Sr reduced porosity in the hot spot region of the casting, and the pores became well dispersed and rounded. This result can be explained by considering the combined effect of the casting design and the differences in the pattern of eutectic solidification between unmodified and Sr-modified alloys.

Segregation of particles and its influence on the morphology of the eutectic silicon phase in Al-7 wt.% Si alloys

A new modification phenomenon is reported for Al-Si alloys, where the Al-Si eutectic is refined by segregated TiB2 particles. The TiB2 particles are pushed to the Al-Si phase boundary during solidification of the eutectic and it is believed that at high concentrations the TiB2 particles restrict solute redistribution causing refinement of the Si. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.