47 resultados para Modification posttranslationnelle
em University of Queensland eSpace - Australia
Resumo:
The effects of boron and strontium interactions on the eutectic silicon in hypoeutectic Al-Si alloys have been studied. Samples were prepared from an AI-I 0 mass%Si base alloy with different Al-B additions, alone and in combination with strontium. In alloys containing no strontium, boron additions do not cause modification of the eutectic silicon, while in strontium containing alloys, boron additions reduce the level of modification of the eutectic silicon. Thermal analysis parameters and eutectic silicon microstructures were investigated with respect to the Sr to B ratio. In order to modify the eutectic silicon, a Sr/B ratio exceeding 0.4 is required.
Resumo:
The effects of boron on the eutectic modification and solidification mode of hypoeutectic Al-Si alloys have been studied adding different boride phases. The results show that boron does not cause modification of the eutectic silicon. Boron-containing samples display eutectic nucleation and growth characteristics similar to that of unmodified alloys. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
Resumo:
The effects of different concentrations of individual additions of rare earth metals (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) on eutectic modification in Al-10mass%Si has been studied by thermal analysis and optical microscopy. According to the twin-plane re-entrant edge (TPRE) and impurity induced twinning mechanism, rare earth metals with atomic radii of about 1.65 times larger than that of silicon, are possible candidates for eutectic modification. All of the rare earth elements caused a depression of the eutectic growth temperature, but only Eu modified the eutectic silicon to a fibrous morphology. At best, the remaining elements resulted in only a small degree of refinement of the plate-like silicon. The samples were also quenched during the eutectic arrest to examine the eutectic solidification modes. Many of the rare-earth additions significantly altered the eutectic solidification mode from that of the unmodified alloy. It is concluded that the impurity induced twinning model of modification, based on atomic radius alone, is inadequate and other mechanisms are essential for the modification process. Furthermore, modification and the eutectic nucleation and growth modes are controlled independently of each other.
Resumo:
A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).
Resumo:
Ultem 1000 polyetherimide films prepared by cast-evaporating technique were covered with a 1H,1H,2H-tridecafluoro-oct-1-ene (PFO) plasma-polymerized layer. The effects of the plasma exposure time on the surface composition were studied by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and surface energy analysis. The surface topography of the plasma layer was deduced from scanning electron microscopy. The F/C ratio for plasma-polymerized PFO under the input RF power of 50 W can be as high as 1.30 for 480 s and similar to 0.4-2 at % of oxygen was detected, resulting from the reaction of long-lived radicals in the plasma polymer with atmospheric oxygen. The plasma deposition of fluorocarbon coating from plasma PFO reduces the surface energy from 46 to 18.3 mJ m(-2). (c) 2006 Wiley Periodicals, Inc.