Tailored conductivity in ion implanted polyetheretherketone

Ion implantation can be used to confer electrical conductivity upon conventional insulating polymers such as polyetheretherketone (PEEK). We have implanted PEEK films using three different types of ion implantation: conventional inert gas and metal ion implantation, and ion beam mixing. We have applied a number of analytical techniques to compare the chemical, structural and electrical properties of these films. The most effective means of increasing electrical conductivity appears to be via ion beam mixing of metals into the polymer, followed by metal ion implantation and finally, inert gas ion implantation. Our results suggest that in all cases, the conducting region corresponds to the implanted layer in the near surface to a depth of similar to750 Angstrom (ion beam mixed) to similar to5000 Angstrom (metal ion). This latter value is significantly higher than would be expected from a purely ballistic standpoint, and can only be attributed to thermal inter-diffusion. Our data also indicates that graphitic carbon is formed within the implant region by chain scission and subsequent cross-linking. All ion implanted samples retained their bulk mechanical properties, i.e. they remained flexible. The implant layers showed no signs of de-lamination. We believe this to be the first comparative study between different implantation techniques, and our results support the proposition that soft electronic circuitry and devices can be created by conductivity engineering with ion beams. (C) 2004 Elsevier B.V. All rights reserved.

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Ion beam modification and analysis of metal/polymer bi-layer thin films

A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).