7 resultados para Hilbert-Mumford criterion

em University of Queensland eSpace - Australia


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We describe an approach for characterizing the process performed by a quantum gate using quantum process tomography, by first modeling the gate in an extended Hilbert space, which includes nonqubit degrees of freedom. To prevent unphysical processes from being predicted, present quantum process tomography procedures incorporate mathematical constraints, which make no assumptions as to the actual physical nature of the system being described. By contrast, the procedure presented here assumes a particular class of physical processes, and enforces physicality by fitting the data to this model. This allows quantum process tomography to be performed using a smaller experimental data set, and produces parameters with a direct physical interpretation. The approach is demonstrated by example of mode matching in an all-optical controlled-NOT gate. The techniques described are general and could be applied to other optical circuits or quantum computing architectures.

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In this paper, we introduce and study a new system of variational inclusions involving (H, eta)-monotone operators in Hilbert space. Using the resolvent operator associated with (H, eta)monotone operators, we prove the existence and uniqueness of solutions for this new system of variational inclusions. We also construct a new algorithm for approximating the solution of this system and discuss the convergence of the sequence of iterates generated by the algorithm. (c) 2005 Elsevier Ltd. All rights reserved.

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Finite-element simulations are used to obtain many thousands of yield points for porous materials with arbitrary void-volume fractions with spherical voids arranged in simple cubic, body-centred cubic and face-centred cubic three-dimensional arrays. Multi-axial stress states are explored. We show that the data may be fitted by a yield function which is similar to the Gurson-Tvergaard-Needleman (GTN) form, but which also depends on the determinant of the stress tensor, and all additional parameters may be expressed in terms of standard GTN-like parameters. The dependence of these parameters on the void-volume fraction is found. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.