Electric-field-induced Mott insulating states in organic field-effect transistors

We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modeled by a Hubbard Hamiltonian similar to that used for the κ-(BEDT-TTF)2X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction.

Coexistence of spin polarization and pairing correlations in metallic grains

We investigate the competition between magnetic depairing interactions, due to spin-exchange mechanism and∕or to spin-dependent asymmetric bandwidths, and pairing coupling in metallic grains. We present a detailed analysis of the quantum ground state in different regimes arising from the interplay between ferromagnetic and pairing correlations for different fillings. We find out that the occurrence of a ground state with coexisting spin-polarization and pairing correlations is enhanced when the asymmetric spin-dependent distribution of the single-particle energies is considered. The mechanisms leading to such a stable quantum state are finally clarified.