The electric field effect on spin injection in tunneling regime

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.

Determination of crystal orientation from micrographs using a MATLAB program

Crys.m is a MATLAB routine that combines a micrograph of a crystal with a scaleable, rotatable three-dimensional cage structure to determine the orientation of the crystal axes. The example presented here uses the morphology of tetragonal lysozyme. Rotation of the cage until it aligns with the crystal in the image yields the orientation of the c axis of the crystal relative to the image normal. This analysis can be used for quantitative determination of crystal orientation effects induced by electric, magnetic and/or gravitational fields.