Enhanced spin injection efficiency in ferromagnet/semiconductor tunnel junctions

Within the ballistic transport picture, we have investigated the spin-polarized transport properties of a ferromagnetic metal/two-dimensional semiconductor (FM/SM) hybrid junction and an FM/FM/SM structure using quantum tunnelling theory. Our calculations indicate explicitly that the low spin injection efficiency (SIE) from an FM into an SM, compared with a ferromagnet/normal metal junction, originates from the mismatch of electron densities in the FM and SM. To enhance the SIE from an FM into an SM, we introduce another FM film between them to form FM/FM/SM double tunnel junctions, in which the quantum interference effect will lead to the current polarization exhibiting periodically oscillating behaviour, with a variation according to the thickness of the middle FM film and/or its exchange energy strength. Our results show that, for some suitable values of these parameters, the SIE can reach a very high level, which can also be affected by the electron density in the SM electrode.

The electric field effect on spin injection in tunneling regime

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.

Modeling of optical detection of spin-polarized carrier injection into light-emitting devices

We investigate the emission of multimodal polarized light from light emitting devices due to spin-aligned carrier injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as nonradiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g factor and magnetic field affect the degree of polarization of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring the degree of spin polarization of carrier injection into nonmagnetic semicondutors.

Preparation of immuno-stimulating complexes (ISCOMs) by ether injection

preparation of liposomes, as a new, continuous and potentially scaleable method for the preparation of ISCOMs. Phosphatidylcholine (PC) and cholesterol (Chol) were dissolved in ether, which was injected into an aqueous solution, maintained at 55 degrees C, containing Quil A. The influences of the following variables on ISCOM formation were investigated: ratio of PC:Quil A:Chol used, pumping rate, total lipid mass and concentration of buffer salts and Quil A in the aqueous phase. All samples were characterized by negative stain transmission electron microscopy, photon correlation spectroscopy and sucrose ultracentrifugation gradient. It was demonstrated that ISCOMs could be produced by this method but the homogeneity of the preparation was influenced by the conditions used. Homogeneous ISCOM preparations were consistently produced only when the weight ratio of PC:Quil A:Chol was 5:3:2 with a total lipid mass of 20 mg, the Quil A dissolved in a 0.01 M phosphate buffer at a concentration of 6 mg in 4 ml, and the ether solution injected into the warmed buffer solution at a rate of 0.2 ml/min. Changing any of these variables resulted in more heterogeneous preparations in which ISCOMs typically co-existed with other colloidal structures such as worm-like and helical micelles, liposomes, lamellae and lipidic particles. (C) 2005 Elsevier B.V. All rights reserved.