Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Punching shear of slab-column connection in flat plate construction

The flat plate system is currently widely used in construction. It permits architectural flexibility, more clear space, less building height, easier formwork, and shorter construction time. However, there remains the problem of brittle punching failure due to the transfer of shearing forces and unbalanced moments at the flat plate-column connection. It is the purpose of this paper to investigate the effects of various interdependent factors that govern the punching shear resistance and behaviour of the flat plate-column connection, as well as their inclusion in current Codes.