Quantum doubles from a class of noncocommutative weak Hopf algebras

The concept of biperfect (noncocommutative) weak Hopf algebras is introduced and their properties are discussed. A new type of quasi-bicrossed products is constructed by means of weak Hopf skew-pairs of the weak Hopf algebras which are generalizations of the Hopf pairs introduced by Takeuchi. As a special case, the quantum double of a finite dimensional biperfect (noncocommutative) weak Hopf algebra is built. Examples of quantum doubles from a Clifford monoid as well as a noncommutative and noncocommutative weak Hopf algebra are given, generalizing quantum doubles from a group and a noncommutative and noncocommutative Hopf algebra, respectively. Moreover, some characterizations of quantum doubles of finite dimensional biperfect weak Hopf algebras are obtained. (C) 2004 American Institute of Physics.

Braided m-Lie algebras

Braided m-Lie algebras induced by multiplication are introduced, which generalize Lie algebras, Lie color algebras and quantum Lie algebras. The necessary and sufficient conditions for the braided m-Lie algebras to be strict Jacobi braided Lie algebras are given. Two classes of braided m-Lie algebras are given, which are generalized matrix braided m-Lie algebras and braided m-Lie subalgebras of End(F)M, where M is a Yetter-Drinfeld module over B with dimB < infinity. In particular, generalized classical braided m-Lie algebras sl(q,f)(GM(G)(A),F) and osp(q,l)(GM(G)(A),M,F) of generalized matrix algebra GMG(A) are constructed and their connection with special generalized matrix Lie superalgebra sl(s,f)(GM(Z2)(A(s)),F) and orthosymplectic generalized matrix Lie super algebra osp(s,l) (GM(Z2)(A(s)),M-s,F) are established. The relationship between representations of braided m-Lie algebras and their associated algebras are established.

Various topological excitations in the SO(4) gauge field in higher dimensions

Following the original analysis Of Zhang and Hu for the 4-dimensional generalization of Quantum Hall effect, there has been much work from different viewpoints on the higher dimensional condensed matter systems. In this paper, we discuss three kinds of topological excitations in the SO(4) gauge field of condensed matter systems in 4-dimension-the instantons and anti-instantons, the 't Hooft-Polyakov monopoles, and the 2-membranes. Using the phi-mapping topological theory, it is revealed that there are 4-, 3-, and 2-dimensional topological currents inhering in the SO (4) gauge field, and the above three kinds of excitations can be directly and explicitly derived from these three kinds of currents, respectively. Moreover, it is shown that the topological charges of these excitations are characterized by the Hopf indices and Brouwer degrees of phi-mapping. (c) 2005 Elsevier Inc. All rights reserved.

Some twisted results

The Drinfeld twist for the opposite quasi-Hopf algebra, H-COP, is determined and is shown to be related to the (second) Drinfeld twist on a quasi-Hopf algebra. The twisted form of the Drinfeld twist is investigated. In the quasi-triangular case, it is shown that the Drinfeld u-operator arises from the equivalence of H-COP to the quasi-Hopf algebra induced by twisting H with the R-matrix. The Altschuler-Coste u-operator arises in a similar way and is shown to be closely related to the Drinfeld u-operator. The quasi-cocycle condition is introduced and is shown to play a central role in the uniqueness of twisted structures on quasi-Hopf algebras. A generalization of the dynamical quantum Yang-Baxter equation, called the quasi-dynamical quantum Yang-Baxter equation, is introduced.

Bifurcation analysis of a dynamic power system with SVC devices

Bifurcation analysis is a very useful tool for power system stability assessment. In this paper, detailed investigation of power system bifurcation behaviour is presented. One and two parameter bifurcation analysis are conducted on a 3-bus power system. We also examined the impact of FACTS devices on power system stability through Hopf bifurcation analysis by taking static Var compensator (SVC) as an example. A simplified first-order model of the SVC device is included in the 3-bus sample system. Real and reactive powers are used as bifurcation parameter in the analysis to compare the system oscillatory properties with and without SVC. The simulation results indicate that the linearized system model with SVC enlarge the voltage stability boundary by moving Hopf bifurcation point to higher level of loading conditions. The installation of SVC increases the dynamic stability range of the system, however complicates the Hopf bifurcation behavior of the system