Voltage control of exchange coupling in phosphorus doped silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

Application of program packages EMTDC and matlab in the analysis of impact of neutral point operating regime on the magnitude of touch Voltage

This paper introduces a method for power system modeling during the earth fault. The possibility of using this method for selection and adjustment of earth fault protection is pointed out. The paper also contains the comparison of results achieved by simulation with the experimental measurements.