Amorphous structures induced in monocrystalline silicon by mechanical loading

Different amorphous structures have been induced in monocrystalline silicon by high pressure in indentation and polishing. Through the use of high-resolution transmission electron microscopy and nanodiffraction, it was found that the structures of amorphous silicon formed at slow and fast loading/unloading rates are dissimilar and inherit the nearest-neighbor distance of the crystal in which they are formed. The results are in good agreement with recent theoretical predictions. (C) 2004 American Institute of Physics.

Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

Charge-based quantum computing using single donors in semiconductors

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in the atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionized. Surface electrodes control the qubit and a radio-frequency single-electron transistor provides fast readout. The calculated single gate times, of order 50 ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.

Application of density functional theory to equilibrium adsorption of argon and nitrogen on amorphous silica surface

We present a new version of non-local density functional theory (NL-DFT) adapted to description of vapor adsorption isotherms on amorphous materials like non-porous silica. The novel feature of this approach is that it accounts for the roughness of adsorbent surface. The solid–fluid interaction is described in the same framework as in the case of fluid–fluid interactions, using the Weeks–Chandler–Andersen (WCA) scheme and the Carnahan–Starling (CS) equation for attractive and repulsive parts of the Helmholtz free energy, respectively. Application to nitrogen and argon adsorption isotherms on non-porous silica LiChrospher Si-1000 at their boiling points, recently published by Jaroniec and co-workers, has shown an excellent correlative ability of our approach over the complete range of pressures, which suggests that the surface roughness is mostly the reason for the observed behavior of adsorption isotherms. From the analysis of these data, we found that in the case of nitrogen adsorption short-range interactions between oxygen atoms on the silica surface and quadrupole of nitrogen molecules play an important role. The approach presented in this paper may be further used in quantitative analysis of adsorption and desorption isotherms in cylindrical pores such as MCM-41 and carbon nanotubes.

Formation and mechanical properties of Mg65Cu25Er10 and Mg65Cu15Ag10Er10 bulk amorphous alloys

Mg65Cu25Er10 and Mg65Cu15Ag10Er10 bulk amorphous alloys were produced by a copper mould casting method. The alloys have high glass-forming ability and good thermal stability. The maximum diameter of glass formation (D-c), glass transition temperature (T-g), crystallization onset temperature (T-x), temperature interval of the supercooled region (Delta T-x), melting temperature (T-m), liquidus temperature (T-1) as well as heats of crystallization (Delta H-x) and melting (Delta H-m) are reported for these alloys. Both alloys exhibit high hardness and high strength at room temperature. (c) 2005 Elsevier B.V. All rights reserved.

Glass transition and enthalpy relaxation of amorphous food saccharides: A review

Many food materials exist in a disordered amorphous solid state due to processing. Therefore, understanding the concept of amorphous state, its important phase transition (i.e., glass transition), and the related phenomena (e.g., enthalpy relaxation) is important to food scientists. Food saccharides, including mono-, di-, oligo-, and polysaccharides, are among the most important major components in food. Focusing on the food saccharides, this review covers important topics related to amorphous solids, including the concept and molecular arrangement of amorphous solid, the formation of amorphous food saccharides, the concept of glass transition and enthalpy relaxation, physical property changes and molecular mobility around the glass transition, measurement of the glass transition and enthalpy relaxation, their mathematical descriptions and models, and influences on food stability.