London-van der Waals adhesiveness of rough particles

Van der Waals forces often dominate interactions and adhesion between fine particles and, in turn, decisively influence the bulk behaviour of powders. However, so far there is no effective means to characterize the adhesive behaviour of such particles. A complication is that most powder particles have rough surfaces, and it is the asperities on the surfaces that touch, confounding the actual surface that is in contact. Conventional approaches using surface energy provide limited information regarding adhesion, and pull-off forces measured through atomic force microscope (AFM) are highly variable and difficult to interpret. In this paper we develop a model which combines the Rumpf-Rabinovich and the JKR-DMT theories to account simultaneously for the effects of surface roughness and deformation on adhesion. This is applied to a 'characteristic asperity' which may be easily obtained from AFM measurements. The concept of adhesiveness, a material property reflecting the influences of elastic deformability, surface roughness, and interfacial surface energy, is introduced as an efficient and quantitative measure of the adhering tendency of a powder. Furthermore, a novel concept of specific adhesiveness is proposed as a convenient tool for characterizing and benchmarking solid materials. This paper provides an example to illustrate the use of the proposed theories. (c) 2005 Elsevier B.V. All rights reserved.

Atomic composition profile change of SiGe islands during Si capping

The 6% Ge isocomposition profile change of individual SiGe islands during Si capping at 640 degrees C is investigated by atomic force microscopy combined with a selective etching procedure. The island shape transforms from a dome to a {103}-faceted pyramid at a Si capping thickness of 0.32 nm, followed by the decreasing of pyramid facet inclination with increasing Si capping layer thickness. The 6% Ge isocomposition profiles show that the island with more highly Si enriched at its one base corner before Si capping becomes to be more highly Si intermixed along pyramid base diagonals during Si capping. This Si enrichment evolution inside an island during Si capping can be attributed to the exchange of capped Si atoms that aggregated to the island by surface diffusion with Ge atoms from inside the island by both atomic surface segregation and interdiffusion rather than to the atomic interdiffusion at the interface between the island and the Si substrate. In addition, the observed Si enrichment along the island base diagonals is attempted to be explained on the basis of the elastic constant anisotropy of the Si and Ge materials in (001) plane. (c) 2006 American Institute of Physics.