Eutectic growth mode in strontium, antimony and phosphorus modified hypoeutectic Al-Si foundry alloys

The effect of strontium (Sr), antimony (Sb) and phosphorus (P) on nucleation and growth mode of the eutectic in hypoeutectic Al-10 mass%Si alloys has been investigated by electron back-scattering diffraction (EBSD) mapping. Specimens were prepared from a hypoeutectic Al-10 mass%Si base alloy, adding different levels of strontium, antimony and phosphorus for modification of eutectic silicon. By comparing the orientation of the aluminium in the eutectic to that of the surrounding primary aluminium dendrites, the solidification mode of the eutectic could be determined. The results of these studies show that the eutectic nucleation mode, and subsequent growth mode, is strongly dependent on additive elements. The EBSD mapping results indicate that the eutectic grew from the primary phase in unmodified and phosphorus-containing alloys. When the eutectic was modified by strontium or antimony, eutectic grains nucleated and grew separately from the primary dendrites.

Eutectic solidification mode in sodium modified Al-7 mass %Si-3.5 mass %Cu-0.2 mass %Mg casting alloys

The influence of sodium (Na) on nucleation and growth of the Al-Si eutectic in a commercial hypoeutectic Al-Si-Cu-Mg foundry alloy has been investigated. The microstructural evolution during eutectic solidification was studied by a quenching technique. By comparing the orientation of the aluminium in the eutectic to that of the surrounding primary aluminium dendrites by EBSD, the eutectic solidification mode could be determined. The results show that the eutectic solidification starts near the mould wall and evolves with front growth opposite the thermal gradient on a macro-scale, and on a micro-scale with independent heterogeneous nucleation of eutectic grains in interdendritic spaces. Na-modified alloys therefore behave significantly differently from those modified by other elemental additions.

Eutectic solidification in hypoeutectic Al-Si alloys: electron backscatter diffraction analysis

Nucleation and growth of the eutectic, in hypoeutectic Al-Si foundry alloys has been investigated by the electron backscatter diffraction (EBSD) mapping technique using a scanning electron microscope (SEM). Sample preparation procedures for optimizing mapping have been developed. To obtain a sufficiently smooth surface from a cast Al-Si eutectic microstructure for EBSD mapping, an appropriate preparation technique by ion milling was developed and applied instead of conventional electropolishing. By comparing the orientation of the aluminum in the eutectic to that of the surrounding primary aluminum dendrites, the growth mechanism of the eutectic can be determined. Two different results were found, in isolation or sometimes together, but distinct for different strontium contents: (1) crystallographic orientations of aluminum in eutectic and surrounding primary dendrites are identical, and (2) wide variation in orientations of the aluminum in the eutectic. (C) 2001 Elsevier Science Inc. All rights reserved.

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective-mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric-field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron wave function was very sensitive to all the experimental variables studied in our work, and thus to optimize the operation of these devices it is necessary to control all parameters varied in this paper.