Eutectic solidification in hypoeutectic Al-Si alloys: electron backscatter diffraction analysis

Nucleation and growth of the eutectic, in hypoeutectic Al-Si foundry alloys has been investigated by the electron backscatter diffraction (EBSD) mapping technique using a scanning electron microscope (SEM). Sample preparation procedures for optimizing mapping have been developed. To obtain a sufficiently smooth surface from a cast Al-Si eutectic microstructure for EBSD mapping, an appropriate preparation technique by ion milling was developed and applied instead of conventional electropolishing. By comparing the orientation of the aluminum in the eutectic to that of the surrounding primary aluminum dendrites, the growth mechanism of the eutectic can be determined. Two different results were found, in isolation or sometimes together, but distinct for different strontium contents: (1) crystallographic orientations of aluminum in eutectic and surrounding primary dendrites are identical, and (2) wide variation in orientations of the aluminum in the eutectic. (C) 2001 Elsevier Science Inc. All rights reserved.

Accurate orientation relationship between ferrite and austenite in low carbon martensite and granular bainite

Convergent beam Kikuchi diffraction was used to accurately determine the orientation relationships (ORs) between austenite and martensite, and between austenite and granular bainite in two Fe-Ni-Mn-C alloys. Both martensite and granular bainite have the same crystallographic characteristics with the OR: (111)(A)parallel to(101)(F), [1 (1) over bar0](A) 2.5degrees +/- 2degrees from [1 (1) over bar(1) over bar](B).

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective-mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric-field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron wave function was very sensitive to all the experimental variables studied in our work, and thus to optimize the operation of these devices it is necessary to control all parameters varied in this paper.