Ultralow voltage resonant tunnelling diode electroabsorption modulator

Embedding a double barrier resonant tunnelling diode (RTD) in a unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non- linearity and negative di erential resistance in the current±voltage (I±V) characteristic of the waveguide. This makes the electric ®eld distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley, there is an increase of the electric ®eld across the depleted core. The electric ®eld enhancement in the core-depleted layer causes the Franz±Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption e ect. High-frequency ac signals as low as 100mV can induce electric ®eld high-speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key di erence between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric ®eld across the core-depleted region; the RTD- EAM has in essence an integrated electronic ampli®er and, therefore, requires considerably less switching power.

Electric field switching in a resonant tunneling diode electroabsorption modulator

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz– Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200- m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p–n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.

Seismo-acoustic ray model benchmarking against experimental tank data

Acoustic predictions of the recently developed TRACEO ray model, which accounts for bottom shear properties, are benchmarked against tank experimental data from the EPEE-1 and EPEE-2 (Elastic Parabolic Equation Experiment) experiments. Both experiments are representative of signal propagation in a Pekeris-like shallow-water waveguide over a non-flat isotropic elastic bottom, where significant interaction of the signal with the bottom can be expected. The benchmarks show, in particular, that the ray model can be as accurate as a parabolic approximation model benchmarked in similar conditions. The results of benchmarking are important, on one side, as a preliminary experimental validation of the model and, on the other side, demonstrates the reliability of the ray approach for seismo-acoustic applications. (C) 2012 Acoustical Society of America. [http://dx.doi.org/10.1121/1.4734236]