Resonance control of piezolaminated structures

This paper deals with a third order shear deformation finite element model wich is applied on the active resonance control thin plate/shell laminated structures with integrated piezoelectric layers of patches, acting as sensors and actuators. The finite element model is a single layer tringular nonconforming plate/shell element with 24 degrees of freedom for he generalized displacements, and one electrical potential degree of freedom for each piezoelectric element layer, wich are surface bonded on the laminated. The newwork method is considered to calculate the dynamic response of the laminated sructures forced to vibrate in the first natural frequency. To achieve a mechanism of active control of the structure dynamic response, a feedback control algorithm is used, coupling the sensor and active piezoelectric layers. The model is applied to the solution of one illustrative case, and the results are presented and discussed.

Ultralow voltage resonant tunnelling diode electroabsorption modulator

Embedding a double barrier resonant tunnelling diode (RTD) in a unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non- linearity and negative di erential resistance in the current±voltage (I±V) characteristic of the waveguide. This makes the electric ®eld distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley, there is an increase of the electric ®eld across the depleted core. The electric ®eld enhancement in the core-depleted layer causes the Franz±Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption e ect. High-frequency ac signals as low as 100mV can induce electric ®eld high-speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key di erence between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric ®eld across the core-depleted region; the RTD- EAM has in essence an integrated electronic ampli®er and, therefore, requires considerably less switching power.

Algoritmos construtivos para treino de redes neuronais b-spline

Dissertação de mest. em Engenharia de Sistemas e Computação - Área de Sistemas de Controlo, Faculdade de Ciências e Tecnologia, Univ.do Algarve, 2001