Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene)

A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Influence of fabrication conditions on the electrical behaviour of polymer Schottky diodes

Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.

Electrical study of impurity states in conjugated polymers

Schottky diodes resulting from an intimate contact of aluminum on electro-deposited poly(3-methylthiopene), PMeT, have been studied by admittance spectroscopy, capacitance-voltage and current-voltage measurements, and optically-induced current transients. The loss-tangents show the existence of interface states that can be removed by vacuum annealing, also visible in the transients. Furthermore, the CV curves don't substantiate the idea of movement of the dopant ions.

Electrical characterization of semiconducting polymers

Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.

Electrical characterization of organic based transistors: stability issues

An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.

Electrical characterization of metal-oxide-polymer devices for non-volatile memory applications

The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.

Tolerance of young (Ceratonia siliqua L.) carob rootstock to NaCl

One-year-old carob (Ceratonia siliqua L.) rootstock was grown in fertilised substrate to evaluate the effects of NaCl salinity stress. The experiment consisted of seven treatments with different concentrations of NaCl in the irrigation water: 0 (control), 15, 30, 40, 80, 120 and 240 (mmol L(-1)), equivalent to electrical conductivities of 0.0, 1.5, 2.9, 3.9, 7.5, 10.9 and 20.6 dS m(-1), respectively. Several growth parameters were measured throughout the experimental period. At the end of the experiment, pH, extractable P and K, and the electrical conductivity of the substrate were assessed in each salinity level. On the same date, the mineral composition of the leaves was compared. The carob rootstock tolerated 13.4 dS m(-1) for a period of 30 days but after 60 days the limit of tolerance was only 6.8 dS m(-1). Salt tolerance indexes were 12.8 and 4.5 for 30 and 60 days, respectively. This tolerance to salinity resulted from the ability to function with concentrations of Cl(-) and Na(+) in leaves up to 24.0 and 8.5 g kg(-1), respectively. Biomass allocation to shoots and roots was similar in all treatments, but after 40 days the number of leaves was reduced, particularly at the larger concentrations (120 and 240 mmol NaCl L(-1)). Leaves of plants irrigated with 240 mmol NaCl L(-1) became chlorotic after 30 days exposure. However, concentrations of N, P. Mg and Zn in leaves were not affected significantly (P > 0.05) by salinity. Apparently, K(+) and Ca(2+) were the key nutrients affected in the response of carob rootstocks to salinity. Plants grown with 80 and 120 mmol L(-1) of NaCl contained the greatest K. concentration. Na(+)/K(+) increased with salinity, due to an elevated Na(+) content but K(+) uptake was also enhanced, which alleviated some Na. stress. Ca(2+) concentration in leaves was not reduced under salinity. Salinization of irrigation water and subsequent impacts on agricultural soils are now common problems in the Mediterranean region. Under such conditions, carob seems to be a salt as well as a drought tolerant species. (C) 2010 Elsevier B.V. All rights reserved.

Photoconductivity and electrical properties of diamond films grown by MPCVD

The electrical and photoconductive features of as-grown microwave-plasma-assisted chemical-vapour deposition (MPCVD) diamond films are studied in correlation with magnetic results obtained from electron paramagnetic resonance (EPR). Also, the morphology is analysed by atomic force microscopy (AFM) showing [111] crystals with a good uniformity of the deposit. The photoresponse as well the current-voltage features observed show an efficient photogeneration of carriers while the optoelectronic characteristics of the metal-diamond junction have an ideality factor of 1.6 together with a rectification ratio of about 10(4) at +/-2.5 V. The nature of the mechanisms responsible for the conduction is discussed. (C) 1998 Elsevier Science S.A.